Trap-controlled behavior in ultrathin Lu2O3 high-k gate dielectrics

Trap-controlled behavior in ultrathin Lu2O3 high-k gate dielectrics

Amorphous Lu2O3 high-k gate dielectrics were grown directly on n-type (100) Si substrates by the pulsed laser deposition (PLD) technique. High-resolution transmission electron microscope (HRTEM) observation illustrated that the Lu2O3 film has amorphous structure and the interface with Si substrate i...

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書目詳細資料
Main Authors:	Yuan, C. L., Darmawan, P., Lee, Pooi See
其他作者:	School of Materials Science & Engineering
格式:	Article
語言:	English
出版:	2013
主題:	DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
在線閱讀:	https://hdl.handle.net/10356/97197 http://hdl.handle.net/10220/10504
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

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