Trap-controlled behavior in ultrathin Lu2O3 high-k gate dielectrics

• المؤلفون الرئيسيون: Yuan, C. L., Darmawan, P., Lee, Pooi See
• مؤلفون آخرون: School of Materials Science & Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2013
• الموضوعات: DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/97197; http://hdl.handle.net/10220/10504

Amorphous Lu2O3 high-k gate dielectrics were grown directly on n-type (100) Si substrates by the pulsed laser deposition (PLD) technique. High-resolution transmission electron microscope (HRTEM) observation illustrated that the Lu2O3 film has amorphous structure and the interface with Si substrate i...