Enhanced stability of Ni monosilicide on MOSFETs poly-Si gate stack

Enhanced stability of Ni monosilicide on MOSFETs poly-Si gate stack

The formation and stability of Ni(Pt)Si on metal oxide semiconductor field effect transistor (MOSFETs) polycrystalline-Si (poly-Si) gate stack was investigated. Poly-Si and partial amorphous Si (a-Si) structures were grown using LPCVD and RTCVD techniques. For pure Ni silicidation, nucleation of NiS...

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Main Authors: Mangelinck, D., Osipowicz, T., Dai, J. Y., See, A., Lee, Pooi See, Pey, Kin Leong, Ding, Jun, Chi, Dong Zhi
Other Authors: School of Materials Science & Engineering
Format: Article
Language:English
Published: 2013
Online Access:https://hdl.handle.net/10356/97202
http://hdl.handle.net/10220/10542
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-972022020-06-01T10:01:59Z Enhanced stability of Ni monosilicide on MOSFETs poly-Si gate stack Mangelinck, D. Osipowicz, T. Dai, J. Y. See, A. Lee, Pooi See Pey, Kin Leong Ding, Jun Chi, Dong Zhi School of Materials Science & Engineering The formation and stability of Ni(Pt)Si on metal oxide semiconductor field effect transistor (MOSFETs) polycrystalline-Si (poly-Si) gate stack was investigated. Poly-Si and partial amorphous Si (a-Si) structures were grown using LPCVD and RTCVD techniques. For pure Ni silicidation, nucleation of NiSi2 was found at 700°C, which is slightly lower than that on monocrystalline Si (about 750°C). With Pt addition, Ni(Pt)Si was found up to 800°C, implying the important role of Gibbs free energy changes in enhancing the monosilicide stability. The extent of layer inversion of Ni(Pt)Si on RTCVD-Si is less than that on LPCVD-Si and thus results in a slower sheet resistance degradation. 2013-06-24T07:24:22Z 2019-12-06T19:40:09Z 2013-06-24T07:24:22Z 2019-12-06T19:40:09Z 2002 2002 Journal Article Lee, P. S., Mangelinck, D., Pey, K. L., Ding, J., Chi, D. Z., Osipowicz, T., et al. (2002). Enhanced stability of Ni monosilicide on MOSFETs poly-Si gate stack. Microelectronic engineering, 60(1-2), 171-181. 0167-9317 https://hdl.handle.net/10356/97202 http://hdl.handle.net/10220/10542 10.1016/S0167-9317(01)00592-5 en Microelectronic engineering © 2002 Elsevier B.V.
institution Nanyang Technological University
building NTU Library
country Singapore
collection DR-NTU
language English
description The formation and stability of Ni(Pt)Si on metal oxide semiconductor field effect transistor (MOSFETs) polycrystalline-Si (poly-Si) gate stack was investigated. Poly-Si and partial amorphous Si (a-Si) structures were grown using LPCVD and RTCVD techniques. For pure Ni silicidation, nucleation of NiSi2 was found at 700°C, which is slightly lower than that on monocrystalline Si (about 750°C). With Pt addition, Ni(Pt)Si was found up to 800°C, implying the important role of Gibbs free energy changes in enhancing the monosilicide stability. The extent of layer inversion of Ni(Pt)Si on RTCVD-Si is less than that on LPCVD-Si and thus results in a slower sheet resistance degradation.
author2 School of Materials Science & Engineering
author_facet School of Materials Science & Engineering
Mangelinck, D.
Osipowicz, T.
Dai, J. Y.
See, A.
Lee, Pooi See
Pey, Kin Leong
Ding, Jun
Chi, Dong Zhi
format Article
author Mangelinck, D.
Osipowicz, T.
Dai, J. Y.
See, A.
Lee, Pooi See
Pey, Kin Leong
Ding, Jun
Chi, Dong Zhi
spellingShingle Mangelinck, D.
Osipowicz, T.
Dai, J. Y.
See, A.
Lee, Pooi See
Pey, Kin Leong
Ding, Jun
Chi, Dong Zhi
Enhanced stability of Ni monosilicide on MOSFETs poly-Si gate stack
author_sort Mangelinck, D.
title Enhanced stability of Ni monosilicide on MOSFETs poly-Si gate stack
title_short Enhanced stability of Ni monosilicide on MOSFETs poly-Si gate stack
title_full Enhanced stability of Ni monosilicide on MOSFETs poly-Si gate stack
title_fullStr Enhanced stability of Ni monosilicide on MOSFETs poly-Si gate stack
title_full_unstemmed Enhanced stability of Ni monosilicide on MOSFETs poly-Si gate stack
title_sort enhanced stability of ni monosilicide on mosfets poly-si gate stack
publishDate 2013
url https://hdl.handle.net/10356/97202
http://hdl.handle.net/10220/10542
_version_ 1681056589591609344

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