Enhanced stability of Ni monosilicide on MOSFETs poly-Si gate stack

• المؤلفون الرئيسيون: Mangelinck, D., Osipowicz, T., Dai, J. Y., See, A., Lee, Pooi See, Pey, Kin Leong, Ding, Jun, Chi, Dong Zhi
• مؤلفون آخرون: School of Materials Science & Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2013
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/97202; http://hdl.handle.net/10220/10542
• المؤسسة: Nanyang Technological University

The formation and stability of Ni(Pt)Si on metal oxide semiconductor field effect transistor (MOSFETs) polycrystalline-Si (poly-Si) gate stack was investigated. Poly-Si and partial amorphous Si (a-Si) structures were grown using LPCVD and RTCVD techniques. For pure Ni silicidation, nucleation of NiS...