Leakage conduction mechanism of amorphous Lu2O3 high-k dielectric films fabricated by pulsed laser ablation

Amorphous Lu2O3 thin films have been deposited on p-type (111) Si substrates by pulsed laser deposition (PLD). A equivalent oxide thickness (EOT) of 1.16 nm with a leakage current density of 4×10−5 A/cm2 at 1 V accumulation bias was obtained for 4.5 nm thick Lu2O3 thin film deposited at room tempera...

Full description

Saved in:

Bibliographic Details
Main Authors:	Yuan, C. L., Darmawan, P., Chan, Mei Yin, Lee, Pooi See
Other Authors:	School of Materials Science & Engineering
Format:	Article
Published:	2013
Subjects:	DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
Online Access:	https://hdl.handle.net/10356/97258 http://hdl.handle.net/10220/10498
Tags:	Add Tag No Tags, Be the first to tag this record!
Institution:	Nanyang Technological University

id	sg-ntu-dr.10356-97258
record_format	dspace
spelling	sg-ntu-dr.10356-972582020-06-01T10:13:51Z Leakage conduction mechanism of amorphous Lu2O3 high-k dielectric films fabricated by pulsed laser ablation Yuan, C. L. Darmawan, P. Chan, Mei Yin Lee, Pooi See School of Materials Science & Engineering DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films Amorphous Lu2O3 thin films have been deposited on p-type (111) Si substrates by pulsed laser deposition (PLD). A equivalent oxide thickness (EOT) of 1.16 nm with a leakage current density of 4×10−5 A/cm2 at 1 V accumulation bias was obtained for 4.5 nm thick Lu2O3 thin film deposited at room temperature followed by post-deposition anneal (PDA) at 600 °C in oxygen ambient. The leakage conduction mechanisms of amorphous Lu2O3 films were investigated. It was found that the Poole-Frenkel (P-F) emission is the dominant conduction mechanism at high electric field region. 2013-06-19T08:47:35Z 2019-12-06T19:40:39Z 2013-06-19T08:47:35Z 2019-12-06T19:40:39Z 2007 2007 Journal Article Yuan, C. L., Darmawan, P., Chan, M. Y., & Lee, P. S. (2007). Leakage conduction mechanism of amorphous Lu2O3 high-k dielectric films fabricated by pulsed laser ablation. Europhysics letters (EPL), 77(6). 0295-5075 https://hdl.handle.net/10356/97258 http://hdl.handle.net/10220/10498 10.1209/0295-5075/77/67001 Europhysics letters (EPL) © 2007 EPLA.
institution	Nanyang Technological University
building	NTU Library
country	Singapore
collection	DR-NTU
topic	DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
spellingShingle	DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films Yuan, C. L. Darmawan, P. Chan, Mei Yin Lee, Pooi See Leakage conduction mechanism of amorphous Lu2O3 high-k dielectric films fabricated by pulsed laser ablation
description	Amorphous Lu2O3 thin films have been deposited on p-type (111) Si substrates by pulsed laser deposition (PLD). A equivalent oxide thickness (EOT) of 1.16 nm with a leakage current density of 4×10−5 A/cm2 at 1 V accumulation bias was obtained for 4.5 nm thick Lu2O3 thin film deposited at room temperature followed by post-deposition anneal (PDA) at 600 °C in oxygen ambient. The leakage conduction mechanisms of amorphous Lu2O3 films were investigated. It was found that the Poole-Frenkel (P-F) emission is the dominant conduction mechanism at high electric field region.
author2	School of Materials Science & Engineering
author_facet	School of Materials Science & Engineering Yuan, C. L. Darmawan, P. Chan, Mei Yin Lee, Pooi See
format	Article
author	Yuan, C. L. Darmawan, P. Chan, Mei Yin Lee, Pooi See
author_sort	Yuan, C. L.
title	Leakage conduction mechanism of amorphous Lu2O3 high-k dielectric films fabricated by pulsed laser ablation
title_short	Leakage conduction mechanism of amorphous Lu2O3 high-k dielectric films fabricated by pulsed laser ablation
title_full	Leakage conduction mechanism of amorphous Lu2O3 high-k dielectric films fabricated by pulsed laser ablation
title_fullStr	Leakage conduction mechanism of amorphous Lu2O3 high-k dielectric films fabricated by pulsed laser ablation
title_full_unstemmed	Leakage conduction mechanism of amorphous Lu2O3 high-k dielectric films fabricated by pulsed laser ablation
title_sort	leakage conduction mechanism of amorphous lu2o3 high-k dielectric films fabricated by pulsed laser ablation
publishDate	2013
url	https://hdl.handle.net/10356/97258 http://hdl.handle.net/10220/10498
_version_	1681056607487655936

Leakage conduction mechanism of amorphous Lu2O3 high-k dielectric films fabricated by pulsed laser ablation

Similar Items