A PAE of 17.5% Ka-band balanced frequency doubler with conversion gain of 20 dB
A frequency doubler from 27 to 41 GHz fabricated in 0.13-μm SiGe BiCMOS technology with a maximum output power of 8 dBm and a power added efficiency (PAE) of 17.5% at dc power consumption of 35 mW is presented. It consists of a balun, a driver amplifier (DA), a common-base (CB) core and a medium pow...
Saved in:
Main Authors: | Li, Jiankang, Lu, Zhong, Xiong, Yong-Zhong, Hou, Debin, Wang, Ren, Goh, Wang Ling, Wu, Wen |
---|---|
Other Authors: | School of Electrical and Electronic Engineering |
Format: | Conference or Workshop Item |
Language: | English |
Published: |
2013
|
Subjects: | |
Online Access: | https://hdl.handle.net/10356/97923 http://hdl.handle.net/10220/13233 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | Nanyang Technological University |
Language: | English |
Similar Items
-
A 27–41 GHz frequency doubler with conversion gain of 12 dB and PAE of 16.9%
by: Li, Jiankang, et al.
Published: (2013) -
A D-band cascode amplifier with 24.3 dB gain and 7.7 dBm output power in 0.13 μm SiGe BiCMOS technology
by: Hou, Debin, et al.
Published: (2013) -
Practical Forgeries and Distinguishers against PAES
by: Jean, Jérémy, et al.
Published: (2016) -
We Forum, vol xiii No. 175 - Apr. 11-17, 1990
by: Burgos, Jr., Jose
Published: (1990) -
Efficient modeling methods on GaAs MESFETs for Ku- and Ka-band power amplifiers
by: Guo, Y.X., et al.
Published: (2014)