Electromigration reliability of interconnections in RF low noise amplifier circuit

• المؤلفون الرئيسيون: He, Feifei, Tan, Cher Ming
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2013
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/97926; http://hdl.handle.net/10220/11218
• المؤسسة: Nanyang Technological University

With the continuous increase of the circuit complexity and the scaling down of the device size, electromigration (EM) failure in the interconnects has become the determining factor for circuit reliability. Most of the EM circuit simulators in the literature are at 2D level. The application of 2D sim...