AlGaN/GaN metal–oxide–semiconductor high-electron-mobility transistors with a high breakdown voltage of 1400 V and a complementary metal–oxide–semiconductor compatible gold-free process
This paper reports the fabrication and characterization of AlGaN/GaN-on-sapphire metal–oxide–semiconductor high-electron-mobility transistors (MOS-HEMTs) using a complementary metal–oxide–semiconductor (CMOS) compatible gold-free process. Devices with a gate-to-drain spacing LGD of 20 m achieved an...
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sg-ntu-dr.10356-983292020-03-07T14:00:29Z AlGaN/GaN metal–oxide–semiconductor high-electron-mobility transistors with a high breakdown voltage of 1400 V and a complementary metal–oxide–semiconductor compatible gold-free process Liu, Xinke Zhan, Chunlei Chan, Kwok Wai Owen, Man Hon Samuel Liu, Wei Chi, Dong Zhi Tan, Leng Seow Chen, Kevin Jing Yeo, Yee-Chia School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering This paper reports the fabrication and characterization of AlGaN/GaN-on-sapphire metal–oxide–semiconductor high-electron-mobility transistors (MOS-HEMTs) using a complementary metal–oxide–semiconductor (CMOS) compatible gold-free process. Devices with a gate-to-drain spacing LGD of 20 m achieved an off-state breakdown voltage VBR of 1400 V and an on-state resistance Ron of 22m cm2. This is the highest VBR achieved so far for gold-free AlGaN/GaN MOS-HEMTs. In addition, high on/off current ratio Ion=Ioff of 109 and low gate leakage current IG of 10 11 A/mm were also obtained. 2013-11-05T06:24:29Z 2019-12-06T19:53:36Z 2013-11-05T06:24:29Z 2019-12-06T19:53:36Z 2013 2013 Journal Article Liu, X., Zhan, C., Chan, K. W., Owen, M. H. S., Liu, W., Chi, D. Z., et al. (2013). AlGaN/GaN metal–oxide–semiconductor high-electron-mobility transistors with a high breakdown voltage of 1400 V and a complementary metal–oxide–semiconductor compatible gold-free process. Japanese journal of applied physics, 52, 04CF06-. https://hdl.handle.net/10356/98329 http://hdl.handle.net/10220/17291 10.7567/JJAP.52.04CF06 en Japanese journal of applied physics |
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DRNTU::Engineering::Electrical and electronic engineering Liu, Xinke Zhan, Chunlei Chan, Kwok Wai Owen, Man Hon Samuel Liu, Wei Chi, Dong Zhi Tan, Leng Seow Chen, Kevin Jing Yeo, Yee-Chia AlGaN/GaN metal–oxide–semiconductor high-electron-mobility transistors with a high breakdown voltage of 1400 V and a complementary metal–oxide–semiconductor compatible gold-free process |
| description |
This paper reports the fabrication and characterization of AlGaN/GaN-on-sapphire metal–oxide–semiconductor high-electron-mobility transistors (MOS-HEMTs) using a complementary metal–oxide–semiconductor (CMOS) compatible gold-free process. Devices with a gate-to-drain spacing LGD of 20 m achieved an off-state breakdown voltage VBR of 1400 V and an on-state resistance Ron of 22m cm2. This is the highest VBR achieved so far for gold-free AlGaN/GaN MOS-HEMTs. In addition, high on/off current ratio Ion=Ioff of 109 and low gate leakage current IG of 10 11 A/mm were also obtained. |
| author2 |
School of Electrical and Electronic Engineering |
| author_facet |
School of Electrical and Electronic Engineering Liu, Xinke Zhan, Chunlei Chan, Kwok Wai Owen, Man Hon Samuel Liu, Wei Chi, Dong Zhi Tan, Leng Seow Chen, Kevin Jing Yeo, Yee-Chia |
| format |
Article |
| author |
Liu, Xinke Zhan, Chunlei Chan, Kwok Wai Owen, Man Hon Samuel Liu, Wei Chi, Dong Zhi Tan, Leng Seow Chen, Kevin Jing Yeo, Yee-Chia |
| author_sort |
Liu, Xinke |
| title |
AlGaN/GaN metal–oxide–semiconductor high-electron-mobility transistors with a high breakdown voltage of 1400 V and a complementary metal–oxide–semiconductor compatible gold-free process |
| title_short |
AlGaN/GaN metal–oxide–semiconductor high-electron-mobility transistors with a high breakdown voltage of 1400 V and a complementary metal–oxide–semiconductor compatible gold-free process |
| title_full |
AlGaN/GaN metal–oxide–semiconductor high-electron-mobility transistors with a high breakdown voltage of 1400 V and a complementary metal–oxide–semiconductor compatible gold-free process |
| title_fullStr |
AlGaN/GaN metal–oxide–semiconductor high-electron-mobility transistors with a high breakdown voltage of 1400 V and a complementary metal–oxide–semiconductor compatible gold-free process |
| title_full_unstemmed |
AlGaN/GaN metal–oxide–semiconductor high-electron-mobility transistors with a high breakdown voltage of 1400 V and a complementary metal–oxide–semiconductor compatible gold-free process |
| title_sort |
algan/gan metal–oxide–semiconductor high-electron-mobility transistors with a high breakdown voltage of 1400 v and a complementary metal–oxide–semiconductor compatible gold-free process |
| publishDate |
2013 |
| url |
https://hdl.handle.net/10356/98329 http://hdl.handle.net/10220/17291 |
| _version_ |
1681038529064337408 |