Conduction mechanism of non-gold Ta/Si/Ti/Al/Ni/Ta ohmic contacts in AlGaN/GaN high-electron-mobility transistors

• المؤلفون الرئيسيون: Li, Yang, Ng, Geok Ing, Arulkumaran, Subramaniam, Ye, Gang, Manoj Kumar, Chandra Mohan, Anand, Mulagumoottil Jesudas, Liu, Zhi Hong
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2015
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering::Semiconductors; DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/98600; http://hdl.handle.net/10220/25661
• المؤسسة: Nanyang Technological University

This work investigates the conduction mechanism of non-gold Ta/Si/Ti/Al/Ni/Ta ohmic contact in un-doped AlGaN/GaN high-electron-mobility transistors (HEMTs) grown on Si. Temperature-dependent current–voltage (I–V) measurements reveal that the conduction occurs primarily via thermionic emission (TE)....