AlGaN/GaN-on-silicon metal–oxide–semiconductor high-electron-mobility transistor with breakdown voltage of 800 V and on-state resistance of 3 mΩ·cm2 using a complementary metal–oxide–semiconductor compatible gold-free process
This letter reports the fabrication and characterization of undoped AlGaN/GaN-on-silicon metal–oxide–semiconductor high-electron-mobility transistors (MOS-HEMTs) using a complementary metal–oxide–semiconductor (CMOS) compatible gold-free process. Devices with a gate-to-drain LGD spacing of 5 µm achi...
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sg-ntu-dr.10356-988012020-03-07T14:02:44Z AlGaN/GaN-on-silicon metal–oxide–semiconductor high-electron-mobility transistor with breakdown voltage of 800 V and on-state resistance of 3 mΩ·cm2 using a complementary metal–oxide–semiconductor compatible gold-free process Yeo, Yee-Chia Liu, Xinke Zhan, Chunlei Chan, Kwok Wai Liu, Wei Tan, Leng Seow Chen, Kevin Jing School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering This letter reports the fabrication and characterization of undoped AlGaN/GaN-on-silicon metal–oxide–semiconductor high-electron-mobility transistors (MOS-HEMTs) using a complementary metal–oxide–semiconductor (CMOS) compatible gold-free process. Devices with a gate-to-drain LGD spacing of 5 µm achieved an off-state breakdown voltage VBR of 800 V and an on-state resistance Ron of 3 mΩ·cm2. In addition, subthreshold swing S of ∼97 mV/decade and Ion/Ioff ratio of ∼106 were obtained. Compared with those of gold-free GaN MOS-HEMTs having a gate-to-drain spacing LGD of less than 10 µm, the VBR achieved in this work is the highest. 2013-07-31T03:42:58Z 2019-12-06T19:59:47Z 2013-07-31T03:42:58Z 2019-12-06T19:59:47Z 2012 2012 Journal Article Liu, X., Zhan, C., Chan, K. W., Liu, W., Tan, L. S., Chen, K. J.,& Yeo, Y. C. (2012). AlGaN/GaN-on-Silicon Metal–Oxide–Semiconductor High-Electron-Mobility Transistor with Breakdown Voltage of 800 V and On-State Resistance of 3 mΩ·cm2 Using a Complementary Metal–Oxide–Semiconductor Compatible Gold-Free Process. Applied Physics Express, 5(6). https://hdl.handle.net/10356/98801 http://hdl.handle.net/10220/12574 10.1143/APEX.5.066501 en Applied physics express |
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DRNTU::Engineering::Electrical and electronic engineering Yeo, Yee-Chia Liu, Xinke Zhan, Chunlei Chan, Kwok Wai Liu, Wei Tan, Leng Seow Chen, Kevin Jing AlGaN/GaN-on-silicon metal–oxide–semiconductor high-electron-mobility transistor with breakdown voltage of 800 V and on-state resistance of 3 mΩ·cm2 using a complementary metal–oxide–semiconductor compatible gold-free process |
| description |
This letter reports the fabrication and characterization of undoped AlGaN/GaN-on-silicon metal–oxide–semiconductor high-electron-mobility transistors (MOS-HEMTs) using a complementary metal–oxide–semiconductor (CMOS) compatible gold-free process. Devices with a gate-to-drain LGD spacing of 5 µm achieved an off-state breakdown voltage VBR of 800 V and an on-state resistance Ron of 3 mΩ·cm2. In addition, subthreshold swing S of ∼97 mV/decade and Ion/Ioff ratio of ∼106 were obtained. Compared with those of gold-free GaN MOS-HEMTs having a gate-to-drain spacing LGD of less than 10 µm, the VBR achieved in this work is the highest. |
| author2 |
School of Electrical and Electronic Engineering |
| author_facet |
School of Electrical and Electronic Engineering Yeo, Yee-Chia Liu, Xinke Zhan, Chunlei Chan, Kwok Wai Liu, Wei Tan, Leng Seow Chen, Kevin Jing |
| format |
Article |
| author |
Yeo, Yee-Chia Liu, Xinke Zhan, Chunlei Chan, Kwok Wai Liu, Wei Tan, Leng Seow Chen, Kevin Jing |
| author_sort |
Yeo, Yee-Chia |
| title |
AlGaN/GaN-on-silicon metal–oxide–semiconductor high-electron-mobility transistor with breakdown voltage of 800 V and on-state resistance of 3 mΩ·cm2 using a complementary metal–oxide–semiconductor compatible gold-free process |
| title_short |
AlGaN/GaN-on-silicon metal–oxide–semiconductor high-electron-mobility transistor with breakdown voltage of 800 V and on-state resistance of 3 mΩ·cm2 using a complementary metal–oxide–semiconductor compatible gold-free process |
| title_full |
AlGaN/GaN-on-silicon metal–oxide–semiconductor high-electron-mobility transistor with breakdown voltage of 800 V and on-state resistance of 3 mΩ·cm2 using a complementary metal–oxide–semiconductor compatible gold-free process |
| title_fullStr |
AlGaN/GaN-on-silicon metal–oxide–semiconductor high-electron-mobility transistor with breakdown voltage of 800 V and on-state resistance of 3 mΩ·cm2 using a complementary metal–oxide–semiconductor compatible gold-free process |
| title_full_unstemmed |
AlGaN/GaN-on-silicon metal–oxide–semiconductor high-electron-mobility transistor with breakdown voltage of 800 V and on-state resistance of 3 mΩ·cm2 using a complementary metal–oxide–semiconductor compatible gold-free process |
| title_sort |
algan/gan-on-silicon metal–oxide–semiconductor high-electron-mobility transistor with breakdown voltage of 800 v and on-state resistance of 3 mω·cm2 using a complementary metal–oxide–semiconductor compatible gold-free process |
| publishDate |
2013 |
| url |
https://hdl.handle.net/10356/98801 http://hdl.handle.net/10220/12574 |
| _version_ |
1681038654076616704 |