High order X-ray diffraction and internal atomic layer roughness of epitaxial and bulk SiC materials
Materials Science Forum
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sg-nus-scholar.10635-1070612015-01-31T02:33:14Z High order X-ray diffraction and internal atomic layer roughness of epitaxial and bulk SiC materials Xu, G. Feng, Z.C. MATERIALS SCIENCE Materials Science Forum 338 I/- MSFOE 2014-10-29T08:38:57Z 2014-10-29T08:38:57Z 2000 Article Xu, G.,Feng, Z.C. (2000). High order X-ray diffraction and internal atomic layer roughness of epitaxial and bulk SiC materials. Materials Science Forum 338 : I/-. ScholarBank@NUS Repository. 02555476 http://scholarbank.nus.edu.sg/handle/10635/107061 NOT_IN_WOS Scopus |
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Materials Science Forum |
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MATERIALS SCIENCE |
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MATERIALS SCIENCE Xu, G. Feng, Z.C. |
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Xu, G. Feng, Z.C. |
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Xu, G. Feng, Z.C. High order X-ray diffraction and internal atomic layer roughness of epitaxial and bulk SiC materials |
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Xu, G. |
title |
High order X-ray diffraction and internal atomic layer roughness of epitaxial and bulk SiC materials |
title_short |
High order X-ray diffraction and internal atomic layer roughness of epitaxial and bulk SiC materials |
title_full |
High order X-ray diffraction and internal atomic layer roughness of epitaxial and bulk SiC materials |
title_fullStr |
High order X-ray diffraction and internal atomic layer roughness of epitaxial and bulk SiC materials |
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High order X-ray diffraction and internal atomic layer roughness of epitaxial and bulk SiC materials |
title_sort |
high order x-ray diffraction and internal atomic layer roughness of epitaxial and bulk sic materials |
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2014 |
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http://scholarbank.nus.edu.sg/handle/10635/107061 |
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