High order X-ray diffraction and internal atomic layer roughness of epitaxial and bulk SiC materials
Materials Science Forum
Saved in:
Main Authors: | Xu, G., Feng, Z.C. |
---|---|
Other Authors: | MATERIALS SCIENCE |
Format: | Article |
Published: |
2014
|
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/107061 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
Internal Atomic Distortion and Layer Roughness of Epitaxial SiC Thin Films Studied by Short Wavelength X-Ray Diffraction
by: Xu, G., et al.
Published: (2014) -
Disorder beneath epitaxial graphene on SiC(0001): An x-ray absorption study
by: Gao, X., et al.
Published: (2014) -
Adsorption on epitaxial graphene on SiC(0001)
by: Huang, H., et al.
Published: (2014) -
Incorporating isolated molybdenum (Mo) atoms into bilayer epitaxial graphene on 4H-SiC(0001)
by: Wan, W., et al.
Published: (2014) -
Evaluation of the strain state in SiGe/Si heterostructures by high resolution X-ray diffraction and convergent beam electron diffraction
by: Toh, S.L., et al.
Published: (2014)