Investigation of boron penetration through decoupled plasma nitrided gate oxide using backside secondary ion mass spectrometry depth profiling
10.1116/1.1535925
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sg-nus-scholar.10635-1130852024-11-12T21:17:59Z Investigation of boron penetration through decoupled plasma nitrided gate oxide using backside secondary ion mass spectrometry depth profiling Yeo, K.L. Wee, A.T.S. Liu, R. Zhou, F.F. See, A. INSTITUTE OF ENGINEERING SCIENCE PHYSICS 10.1116/1.1535925 Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 21 1 SPEC. 193-197 JVTBD 2014-11-28T09:11:49Z 2014-11-28T09:11:49Z 2003-01 Article Yeo, K.L., Wee, A.T.S., Liu, R., Zhou, F.F., See, A. (2003-01). Investigation of boron penetration through decoupled plasma nitrided gate oxide using backside secondary ion mass spectrometry depth profiling. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 21 (1 SPEC.) : 193-197. ScholarBank@NUS Repository. https://doi.org/10.1116/1.1535925 10711023 http://scholarbank.nus.edu.sg/handle/10635/113085 000182603900036 Scopus |
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INSTITUTE OF ENGINEERING SCIENCE |
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INSTITUTE OF ENGINEERING SCIENCE Yeo, K.L. Wee, A.T.S. Liu, R. Zhou, F.F. See, A. |
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Yeo, K.L. Wee, A.T.S. Liu, R. Zhou, F.F. See, A. |
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Yeo, K.L. Wee, A.T.S. Liu, R. Zhou, F.F. See, A. Investigation of boron penetration through decoupled plasma nitrided gate oxide using backside secondary ion mass spectrometry depth profiling |
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Yeo, K.L. |
title |
Investigation of boron penetration through decoupled plasma nitrided gate oxide using backside secondary ion mass spectrometry depth profiling |
title_short |
Investigation of boron penetration through decoupled plasma nitrided gate oxide using backside secondary ion mass spectrometry depth profiling |
title_full |
Investigation of boron penetration through decoupled plasma nitrided gate oxide using backside secondary ion mass spectrometry depth profiling |
title_fullStr |
Investigation of boron penetration through decoupled plasma nitrided gate oxide using backside secondary ion mass spectrometry depth profiling |
title_full_unstemmed |
Investigation of boron penetration through decoupled plasma nitrided gate oxide using backside secondary ion mass spectrometry depth profiling |
title_sort |
investigation of boron penetration through decoupled plasma nitrided gate oxide using backside secondary ion mass spectrometry depth profiling |
publishDate |
2014 |
url |
http://scholarbank.nus.edu.sg/handle/10635/113085 |
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