Investigation of boron penetration through decoupled plasma nitrided gate oxide using backside secondary ion mass spectrometry depth profiling

10.1116/1.1535925

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Main Authors: Yeo, K.L., Wee, A.T.S., Liu, R., Zhou, F.F., See, A.
Other Authors: INSTITUTE OF ENGINEERING SCIENCE
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/113085
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Institution: National University of Singapore
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spelling sg-nus-scholar.10635-1130852024-11-12T21:17:59Z Investigation of boron penetration through decoupled plasma nitrided gate oxide using backside secondary ion mass spectrometry depth profiling Yeo, K.L. Wee, A.T.S. Liu, R. Zhou, F.F. See, A. INSTITUTE OF ENGINEERING SCIENCE PHYSICS 10.1116/1.1535925 Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 21 1 SPEC. 193-197 JVTBD 2014-11-28T09:11:49Z 2014-11-28T09:11:49Z 2003-01 Article Yeo, K.L., Wee, A.T.S., Liu, R., Zhou, F.F., See, A. (2003-01). Investigation of boron penetration through decoupled plasma nitrided gate oxide using backside secondary ion mass spectrometry depth profiling. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 21 (1 SPEC.) : 193-197. ScholarBank@NUS Repository. https://doi.org/10.1116/1.1535925 10711023 http://scholarbank.nus.edu.sg/handle/10635/113085 000182603900036 Scopus
institution National University of Singapore
building NUS Library
continent Asia
country Singapore
Singapore
content_provider NUS Library
collection ScholarBank@NUS
description 10.1116/1.1535925
author2 INSTITUTE OF ENGINEERING SCIENCE
author_facet INSTITUTE OF ENGINEERING SCIENCE
Yeo, K.L.
Wee, A.T.S.
Liu, R.
Zhou, F.F.
See, A.
format Article
author Yeo, K.L.
Wee, A.T.S.
Liu, R.
Zhou, F.F.
See, A.
spellingShingle Yeo, K.L.
Wee, A.T.S.
Liu, R.
Zhou, F.F.
See, A.
Investigation of boron penetration through decoupled plasma nitrided gate oxide using backside secondary ion mass spectrometry depth profiling
author_sort Yeo, K.L.
title Investigation of boron penetration through decoupled plasma nitrided gate oxide using backside secondary ion mass spectrometry depth profiling
title_short Investigation of boron penetration through decoupled plasma nitrided gate oxide using backside secondary ion mass spectrometry depth profiling
title_full Investigation of boron penetration through decoupled plasma nitrided gate oxide using backside secondary ion mass spectrometry depth profiling
title_fullStr Investigation of boron penetration through decoupled plasma nitrided gate oxide using backside secondary ion mass spectrometry depth profiling
title_full_unstemmed Investigation of boron penetration through decoupled plasma nitrided gate oxide using backside secondary ion mass spectrometry depth profiling
title_sort investigation of boron penetration through decoupled plasma nitrided gate oxide using backside secondary ion mass spectrometry depth profiling
publishDate 2014
url http://scholarbank.nus.edu.sg/handle/10635/113085
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