Investigation of boron penetration through decoupled plasma nitrided gate oxide using backside secondary ion mass spectrometry depth profiling

Investigation of boron penetration through decoupled plasma nitrided gate oxide using backside secondary ion mass spectrometry depth profiling

10.1116/1.1535925

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Bibliographic Details
Main Authors: Yeo, K.L., Wee, A.T.S., Liu, R., Zhou, F.F., See, A.
Other Authors: INSTITUTE OF ENGINEERING SCIENCE
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/113085
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Institution: National University of Singapore
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