STUDY ON THE REDUCTION OF ACCESS RESISTANCE OF INAIN/GAN HIGH ELECTRON MOBILITY TRANSISTORS

• Main Author: LIU YI
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Theses and Dissertations
• Language: English
• Published: 2015
• Subjects: InAlN/GaN, HEMT, ohmic contact, passivation, device characterizations
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/120129
• Institution: National University of Singapore

Ph.D