STUDY ON THE REDUCTION OF ACCESS RESISTANCE OF INAIN/GAN HIGH ELECTRON MOBILITY TRANSISTORS
Ph.D
Saved in:
Main Author: | LIU YI |
---|---|
Other Authors: | ELECTRICAL & COMPUTER ENGINEERING |
Format: | Theses and Dissertations |
Language: | English |
Published: |
2015
|
Subjects: | |
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/120129 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Language: | English |
Similar Items
-
STUDY OF CMOS COMPATIBLE RUTHENIUM OXIDE SCHOTTKY CONTACTS FOR ALGAN/GAN AND INALN/GAN DIODES AND HIGH MOBILITY TRANSISTORS GROWN ON SILICON (111) SUBSTRATES
by: LWIN MIN KYAW
Published: (2015) -
AlGaN/GaN high electron mobility transistors with implanted ohmic contacts
by: Wang, H.T., et al.
Published: (2014) -
AlGan/Gan metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs) with novel gate oxides
by: LIU CHANG
Published: (2010) -
Impact of carbon impurities on the initial leakage current of AlGaN/GaN high electron mobility transistors
by: Gao, Yu, et al.
Published: (2019) -
Temperature dependent characteristics of InAlN/GaN HEMTs for mm-wave applications
by: Xing, Weichuan, et al.
Published: (2018)