STUDY ON THE REDUCTION OF ACCESS RESISTANCE OF INAIN/GAN HIGH ELECTRON MOBILITY TRANSISTORS

Ph.D

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Bibliographic Details
Main Author:	LIU YI
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Theses and Dissertations
Language:	English
Published:	2015
Subjects:	InAlN/GaN, HEMT, ohmic contact, passivation, device characterizations
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/120129
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Institution:	National University of Singapore
Language:	English

id	sg-nus-scholar.10635-120129
record_format	dspace
spelling	sg-nus-scholar.10635-1201292015-07-01T01:39:33Z STUDY ON THE REDUCTION OF ACCESS RESISTANCE OF INAIN/GAN HIGH ELECTRON MOBILITY TRANSISTORS LIU YI ELECTRICAL & COMPUTER ENGINEERING CHOR ENG FONG PATRICK LO GUOQIANG InAlN/GaN, HEMT, ohmic contact, passivation, device characterizations Ph.D DOCTOR OF PHILOSOPHY 2015-06-30T18:01:21Z 2015-06-30T18:01:21Z 2015-01-23 Thesis LIU YI (2015-01-23). STUDY ON THE REDUCTION OF ACCESS RESISTANCE OF INAIN/GAN HIGH ELECTRON MOBILITY TRANSISTORS. ScholarBank@NUS Repository. http://scholarbank.nus.edu.sg/handle/10635/120129 NOT_IN_WOS en
institution	National University of Singapore
building	NUS Library
country	Singapore
collection	ScholarBank@NUS
language	English
topic	InAlN/GaN, HEMT, ohmic contact, passivation, device characterizations
spellingShingle	InAlN/GaN, HEMT, ohmic contact, passivation, device characterizations LIU YI STUDY ON THE REDUCTION OF ACCESS RESISTANCE OF INAIN/GAN HIGH ELECTRON MOBILITY TRANSISTORS
description	Ph.D
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING LIU YI
format	Theses and Dissertations
author	LIU YI
author_sort	LIU YI
title	STUDY ON THE REDUCTION OF ACCESS RESISTANCE OF INAIN/GAN HIGH ELECTRON MOBILITY TRANSISTORS
title_short	STUDY ON THE REDUCTION OF ACCESS RESISTANCE OF INAIN/GAN HIGH ELECTRON MOBILITY TRANSISTORS
title_full	STUDY ON THE REDUCTION OF ACCESS RESISTANCE OF INAIN/GAN HIGH ELECTRON MOBILITY TRANSISTORS
title_fullStr	STUDY ON THE REDUCTION OF ACCESS RESISTANCE OF INAIN/GAN HIGH ELECTRON MOBILITY TRANSISTORS
title_full_unstemmed	STUDY ON THE REDUCTION OF ACCESS RESISTANCE OF INAIN/GAN HIGH ELECTRON MOBILITY TRANSISTORS
title_sort	study on the reduction of access resistance of inain/gan high electron mobility transistors
publishDate	2015
url	http://scholarbank.nus.edu.sg/handle/10635/120129
_version_	1681095615713378304

STUDY ON THE REDUCTION OF ACCESS RESISTANCE OF INAIN/GAN HIGH ELECTRON MOBILITY TRANSISTORS

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