Band alignment of HfAlO/GaN (0 0 0 1) determined by X-ray photoelectron spectroscopy: Effect of in situ SiH4 passivation

Band alignment of HfAlO/GaN (0 0 0 1) determined by X-ray photoelectron spectroscopy: Effect of in situ SiH4 passivation

10.1016/j.jallcom.2015.02.139

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Bibliographic Details
Main Authors: Liu, X., Liu, Z., Pannirselvam, S., Pan, J., Liu, W., Jia, F., Lu, Y., Liu, C., Yu, W., He, J., Tan, L.S.
Other Authors: DIVISION OF BIOENGINEERING
Format: Article
Published: Elsevier 2016
Online Access:http://scholarbank.nus.edu.sg/handle/10635/128133
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Institution: National University of Singapore

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http://scholarbank.nus.edu.sg/handle/10635/128133

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