Band alignment of HfAlO/GaN (0 0 0 1) determined by X-ray photoelectron spectroscopy: Effect of in situ SiH4 passivation

10.1016/j.jallcom.2015.02.139

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Main Authors:	Liu, X., Liu, Z., Pannirselvam, S., Pan, J., Liu, W., Jia, F., Lu, Y., Liu, C., Yu, W., He, J., Tan, L.S.
Other Authors:	DIVISION OF BIOENGINEERING
Format:	Article
Published:	Elsevier 2016
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/128133
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Institution:	National University of Singapore

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spelling	sg-nus-scholar.10635-1281332024-11-09T22:39:50Z Band alignment of HfAlO/GaN (0 0 0 1) determined by X-ray photoelectron spectroscopy: Effect of in situ SiH4 passivation Liu, X. Liu, Z. Pannirselvam, S. Pan, J. Liu, W. Jia, F. Lu, Y. Liu, C. Yu, W. He, J. Tan, L.S. DIVISION OF BIOENGINEERING 10.1016/j.jallcom.2015.02.139 Journal of Alloys and Compounds 636 191-195 2016-09-20T05:46:11Z 2016-09-20T05:46:11Z 2015 Article Liu, X., Liu, Z., Pannirselvam, S., Pan, J., Liu, W., Jia, F., Lu, Y., Liu, C., Yu, W., He, J., Tan, L.S. (2015). Band alignment of HfAlO/GaN (0 0 0 1) determined by X-ray photoelectron spectroscopy: Effect of in situ SiH4 passivation. Journal of Alloys and Compounds 636 : 191-195. ScholarBank@NUS Repository. https://doi.org/10.1016/j.jallcom.2015.02.139 09258388 http://scholarbank.nus.edu.sg/handle/10635/128133 000351836600032 Elsevier
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
description	10.1016/j.jallcom.2015.02.139
author2	DIVISION OF BIOENGINEERING
author_facet	DIVISION OF BIOENGINEERING Liu, X. Liu, Z. Pannirselvam, S. Pan, J. Liu, W. Jia, F. Lu, Y. Liu, C. Yu, W. He, J. Tan, L.S.
format	Article
author	Liu, X. Liu, Z. Pannirselvam, S. Pan, J. Liu, W. Jia, F. Lu, Y. Liu, C. Yu, W. He, J. Tan, L.S.
spellingShingle	Liu, X. Liu, Z. Pannirselvam, S. Pan, J. Liu, W. Jia, F. Lu, Y. Liu, C. Yu, W. He, J. Tan, L.S. Band alignment of HfAlO/GaN (0 0 0 1) determined by X-ray photoelectron spectroscopy: Effect of in situ SiH4 passivation
author_sort	Liu, X.
title	Band alignment of HfAlO/GaN (0 0 0 1) determined by X-ray photoelectron spectroscopy: Effect of in situ SiH4 passivation
title_short	Band alignment of HfAlO/GaN (0 0 0 1) determined by X-ray photoelectron spectroscopy: Effect of in situ SiH4 passivation
title_full	Band alignment of HfAlO/GaN (0 0 0 1) determined by X-ray photoelectron spectroscopy: Effect of in situ SiH4 passivation
title_fullStr	Band alignment of HfAlO/GaN (0 0 0 1) determined by X-ray photoelectron spectroscopy: Effect of in situ SiH4 passivation
title_full_unstemmed	Band alignment of HfAlO/GaN (0 0 0 1) determined by X-ray photoelectron spectroscopy: Effect of in situ SiH4 passivation
title_sort	band alignment of hfalo/gan (0 0 0 1) determined by x-ray photoelectron spectroscopy: effect of in situ sih4 passivation
publisher	Elsevier
publishDate	2016
url	http://scholarbank.nus.edu.sg/handle/10635/128133
_version_	1821196759149314048

Band alignment of HfAlO/GaN (0 0 0 1) determined by X-ray photoelectron spectroscopy: Effect of in situ SiH4 passivation

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