Numerical quantum modeling of field-effect-transistor with sub-10nm thin film semiconductor layer as active channel : physical limits and engineering challenges

Ph.D

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Bibliographic Details
Main Author:	LOW AIK SENG, TONY
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Theses and Dissertations
Language:	English
Published:	2010
Subjects:	quantum, modeling, UTB, mosfet, bandstructure, transport
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/12976
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Institution:	National University of Singapore
Language:	English

id	sg-nus-scholar.10635-12976
record_format	dspace
spelling	sg-nus-scholar.10635-129762017-10-21T09:28:50Z Numerical quantum modeling of field-effect-transistor with sub-10nm thin film semiconductor layer as active channel : physical limits and engineering challenges LOW AIK SENG, TONY ELECTRICAL & COMPUTER ENGINEERING LI MING-FU quantum, modeling, UTB, mosfet, bandstructure, transport Ph.D DOCTOR OF PHILOSOPHY 2010-04-08T10:28:54Z 2010-04-08T10:28:54Z 2008-03-07 Thesis LOW AIK SENG, TONY (2008-03-07). Numerical quantum modeling of field-effect-transistor with sub-10nm thin film semiconductor layer as active channel : physical limits and engineering challenges. ScholarBank@NUS Repository. http://scholarbank.nus.edu.sg/handle/10635/12976 NOT_IN_WOS en
institution	National University of Singapore
building	NUS Library
country	Singapore
collection	ScholarBank@NUS
language	English
topic	quantum, modeling, UTB, mosfet, bandstructure, transport
spellingShingle	quantum, modeling, UTB, mosfet, bandstructure, transport LOW AIK SENG, TONY Numerical quantum modeling of field-effect-transistor with sub-10nm thin film semiconductor layer as active channel : physical limits and engineering challenges
description	Ph.D
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING LOW AIK SENG, TONY
format	Theses and Dissertations
author	LOW AIK SENG, TONY
author_sort	LOW AIK SENG, TONY
title	Numerical quantum modeling of field-effect-transistor with sub-10nm thin film semiconductor layer as active channel : physical limits and engineering challenges
title_short	Numerical quantum modeling of field-effect-transistor with sub-10nm thin film semiconductor layer as active channel : physical limits and engineering challenges
title_full	Numerical quantum modeling of field-effect-transistor with sub-10nm thin film semiconductor layer as active channel : physical limits and engineering challenges
title_fullStr	Numerical quantum modeling of field-effect-transistor with sub-10nm thin film semiconductor layer as active channel : physical limits and engineering challenges
title_full_unstemmed	Numerical quantum modeling of field-effect-transistor with sub-10nm thin film semiconductor layer as active channel : physical limits and engineering challenges
title_sort	numerical quantum modeling of field-effect-transistor with sub-10nm thin film semiconductor layer as active channel : physical limits and engineering challenges
publishDate	2010
url	http://scholarbank.nus.edu.sg/handle/10635/12976
_version_	1681078778852278272

Numerical quantum modeling of field-effect-transistor with sub-10nm thin film semiconductor layer as active channel : physical limits and engineering challenges

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