Numerical quantum modeling of field-effect-transistor with sub-10nm thin film semiconductor layer as active channel : physical limits and engineering challenges

Numerical quantum modeling of field-effect-transistor with sub-10nm thin film semiconductor layer as active channel : physical limits and engineering challenges

Ph.D

Saved in:

Bibliographic Details
Main Author:	LOW AIK SENG, TONY
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Theses and Dissertations
Language:	English
Published:	2010
Subjects:	quantum, modeling, UTB, mosfet, bandstructure, transport
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/12976
Tags:	Add Tag No Tags, Be the first to tag this record!
Institution:	National University of Singapore
Language:	English

Similar Items

Modeling study of the impact of surface roughness on silicon and germanium UTB MOSFETs
by: Low, T., et al.
Published: (2014)

Applications of atomic layer deposition in solar cells
by: Niu, Wenbin, et al.
Published: (2016)

Study on high mobility channel transistors for future sub-10 nm CMOS technology
by: GAO FEI
Published: (2010)

Electronic bandstructure and optical gain of lattice matched III-V dilute nitride bismide quantum wells for 1.55 μm optical communication systems
by: Fan, Wei Jun, et al.
Published: (2017)

Theoretical study of graphene nanoribbon field-effect transistors
by: Liang, G., et al.
Published: (2014)

Total Ionizing Dose (TID) Effects on Finger Transistors in a 65nm CMOS Process
by: Jiang, Jize, et al.
Published: (2016)

Computational study of double-gate graphene nano-ribbon transistors
by: Liang, G., et al.
Published: (2014)

Investigation of Thickness and Orientation Effects on the III-V DG-UTB FET: A Simulation Approach
by: GUO YAN
Published: (2013)

Schottky source/drain transistor integrated with high-k and metal gate for sub-tenth nm technology
by: LI RUI
Published: (2010)

ADVANCED GERMANIUM-TIN P-CHANNEL METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS
by: LEI DIAN
Published: (2018)

High mobility III-V compound semiconductors for advanced transistor applications
by: CHIN HOCK CHUN
Published: (2011)

Strained-SOI n-channel transistor with silicon-carbon source/drain regions for carrier transport enhancement
by: Chui, K.-J., et al.
Published: (2014)

Inversion-mode self-aligned In0.53Ga0.47 As N-channel metal-oxide-semiconductor field-effect transistor with HfAlO gate dielectric and TaN metal gate
by: Lin, J.Q., et al.
Published: (2014)

INTEGRATION OF INGAAS CHANNEL FIELD-EFFECT TRANSISTORS WITH ELECTRONIC AND PHOTONIC DEVICES
by: ANNIE KUMAR
Published: (2018)

Extending Si CMOS: InGaAs and GeSn High Mobility Channel Transistors for Future High Speed and Low Power Applications
by: GONG XIAO
Published: (2013)

Selenium segregation for lowering the contact resistance in ultrathin-body MOSFETs with fully metallized source/drain
by: Wong, H.-S., et al.
Published: (2014)

INGAAS QUANTUM-WELL MOSFETS ON SILICON SUBSTRATES FOR NEXT-GENERATION LOGIC & MIXED-SIGNAL APPLICATIONS
by: SACHIN
Published: (2017)

Size effect of embedded nanocrystals in floating gate MOSFET devices
by: Cheng, X.Z., et al.
Published: (2014)

Theoretical analyses of oxide-bypassed superjunction power metal oxide semiconductor field effect transistor devices
by: Chen, Y., et al.
Published: (2014)

SIMULATION AND CHARACTERIZATION OF QUANTUM WELL VERTICAL CAVITY SURFACE EMITTING LASERS
by: KUNAL MUKHERJEE
Published: (2019)

Strained germanium-tin (GeSn) p-channel metal-oxide-semiconductor field-effect-transistors (p-MOSFETs) with ammonium sulfide passivation
by: Wang, L., et al.
Published: (2014)

Extraction of channel length in 0.1 μm NMOSFET by gate to drain capacitance
by: Ling, C.H., et al.
Published: (2014)

Post-stress dual-trap interaction in hot-carrier stressed submicrometer n-channel metal-oxide-semiconductor field-effect-transistors
by: Chim, W.K., et al.
Published: (2014)

Germanium nanowire metal-oxide-semiconductor field-effect transistor fabricated by complementary-metal-oxide-semiconductor-compatible process
by: Peng, J.W., et al.
Published: (2014)

Metal-germanide Schottky Source/Drain transistor on Germanium substrate for future CMOS technology
by: Li, R., et al.
Published: (2014)

Performance benefits of diamond-like carbon liner stressor in strained p-channel field-effect transistors with silicon-germanium source and drain
by: Tan, K.-M., et al.
Published: (2014)

Correlation between charge pumping method and direct-current current voltage method in p-type metal-oxide-semiconductor field-effect transistors
by: Jie, B.-B., et al.
Published: (2014)

Hot-carrier lifetime dependence on channel width and silicon recess depth in n-channel metal-oxide-semiconductor field-effect-transistors with the recessed local oxidation of silicon isolation structure
by: Chim, W.K., et al.
Published: (2014)

Ge₀.₉₅Sn₀.₀₅ gate-all-around p-channel metal-oxide-semiconductor field-effect transistors with sub-3 nm nanowire width
by: Kang, Yuye, et al.
Published: (2022)

Advanced Transistors for Supply Voltage Reduction: Tunneling Field-Effect Transistors and High-Mobility MOSFETS
by: GUO PENGFEI
Published: (2013)

Direct tunneling currents through gate dielectrics in deep submicron MOSFETs
by: Hou, Y., et al.
Published: (2014)

High performance Ga2O3 metal-oxide-semiconductor field-effect transistors on an AlN/Si substrate
by: Lei, D., et al.
Published: (2021)

Strain Engineering for Advanced Silicon Transistors
by: DING YINJIE
Published: (2014)

Scaling Parameter Dependent Drain Induced Barrier Lowering Effect in Double-Gate Silicon-on-Insulator Metal-Oxide-Semiconductor Field Effect Transistor
by: Samudra, G., et al.
Published: (2014)

Scaling Parameter Dependent Drain Induced Barrier Lowering Effect in Double-Gate Silicon-on-Insulator Metal-Oxide-Semiconductor Field Effect Transistor
by: Samudra, G., et al.
Published: (2014)

THEORETICAL STUDY OF ADVANCED FIELD-EFFECT TRANSISTORS BASED ON ALTERNATIVE CHANNEL MATERIALS FOR SUPPLY VOLTAGE REDUCTION
by: LOW KAIN LU
Published: (2015)

Pt-germanide formed by laser annealing and its application for schottky source/drain metal-oxide-semiconductor field-effect transistor integrated with TaN/chemical vapor deposition HfO2/Ge gate stack
by: Li, R., et al.
Published: (2014)

NEGATIVE CAPACITANCE FERROELECTRIC MOSFET FOR LOW POWER CIRCUITS: POTENTIAL AND LIMITATIONS
by: YANG LI
Published: (2017)

Quantum mechanical simulation of a metal-oxide-semiconductor system
by: ZHENG JIANXIN
Published: (2010)

Three-port RF characterization of MOS transistors
by: Mahalingam, U., et al.
Published: (2014)