AlGan/Gan metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs) with novel gate oxides

Ph.D

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Bibliographic Details
Main Author:	LIU CHANG
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Theses and Dissertations
Language:	English
Published:	2010
Subjects:	AlGaN/GaN HEMTs, MOS-HEMTs, high-k dielectric, epitaxial growth, pulsed-laser-deposition, device characterizations
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/13138
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Institution:	National University of Singapore
Language:	English

id	sg-nus-scholar.10635-13138
record_format	dspace
spelling	sg-nus-scholar.10635-131382017-10-21T10:05:43Z AlGan/Gan metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs) with novel gate oxides LIU CHANG ELECTRICAL & COMPUTER ENGINEERING CHOR ENG FONG TAN LENG SEOW AlGaN/GaN HEMTs, MOS-HEMTs, high-k dielectric, epitaxial growth, pulsed-laser-deposition, device characterizations Ph.D DOCTOR OF PHILOSOPHY 2010-04-08T10:30:22Z 2010-04-08T10:30:22Z 2008-04-30 Thesis LIU CHANG (2008-04-30). AlGan/Gan metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs) with novel gate oxides. ScholarBank@NUS Repository. http://scholarbank.nus.edu.sg/handle/10635/13138 NOT_IN_WOS en
institution	National University of Singapore
building	NUS Library
country	Singapore
collection	ScholarBank@NUS
language	English
topic	AlGaN/GaN HEMTs, MOS-HEMTs, high-k dielectric, epitaxial growth, pulsed-laser-deposition, device characterizations
spellingShingle	AlGaN/GaN HEMTs, MOS-HEMTs, high-k dielectric, epitaxial growth, pulsed-laser-deposition, device characterizations LIU CHANG AlGan/Gan metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs) with novel gate oxides
description	Ph.D
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING LIU CHANG
format	Theses and Dissertations
author	LIU CHANG
author_sort	LIU CHANG
title	AlGan/Gan metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs) with novel gate oxides
title_short	AlGan/Gan metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs) with novel gate oxides
title_full	AlGan/Gan metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs) with novel gate oxides
title_fullStr	AlGan/Gan metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs) with novel gate oxides
title_full_unstemmed	AlGan/Gan metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs) with novel gate oxides
title_sort	algan/gan metal-oxide-semiconductor high electron mobility transistors (mos-hemts) with novel gate oxides
publishDate	2010
url	http://scholarbank.nus.edu.sg/handle/10635/13138
_version_	1681078806483304448

AlGan/Gan metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs) with novel gate oxides

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