AlGan/Gan metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs) with novel gate oxides

Ph.D

Saved in:
Bibliographic Details
Main Author: LIU CHANG
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Theses and Dissertations
Language:English
Published: 2010
Subjects:
Online Access:http://scholarbank.nus.edu.sg/handle/10635/13138
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: National University of Singapore
Language: English

Similar Items