FIN FET SIDE WALL FORMATION, CHARACTERIZATION AND RELATED SIMULATION

Master's

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Bibliographic Details
Main Author:	LIU JIN
Other Authors:	SINGAPORE-MIT ALLIANCE
Format:	Theses and Dissertations
Published:	2019
Subjects:	Fin FET MOS Capacitor lateral etching TMA Tsuprem4TM and MediciTM C-V characteristics I-V characteristics Layout Design Interface Charge Oxide Charge Depletion Width
Online Access:	https://scholarbank.nus.edu.sg/handle/10635/154034
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Institution:	National University of Singapore

Description
Summary:	Master's

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