STT-MRAMs for Future Universal Memories: Perspective and Prospective

10.1109/MIEL.2012.6222872

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Bibliographic Details
Main Authors:	Augustine, Charles, Mojumder, Niladri, Fong, Xuanyao, Choday, Harsha, Park, Sang Phill, Roy, Kaushik
Other Authors:	DEPT OF ELECTRICAL & COMPUTER ENGG
Format:	Conference or Workshop Item
Published:	IEEE 2019
Subjects:	Science & Technology Technology Engineering, Electrical & Electronic Nanoscience & Nanotechnology Engineering Science & Technology - Other Topics Spin-transfer torque MTJ memory low power parametric process variations scaling MAGNETIC TUNNEL-JUNCTIONS DESIGN
Online Access:	https://scholarbank.nus.edu.sg/handle/10635/156219
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-156219
record_format	dspace
spelling	sg-nus-scholar.10635-1562192019-12-02T02:41:40Z STT-MRAMs for Future Universal Memories: Perspective and Prospective Augustine, Charles Mojumder, Niladri Fong, Xuanyao Choday, Harsha Park, Sang Phill Roy, Kaushik DEPT OF ELECTRICAL & COMPUTER ENGG Science & Technology Technology Engineering, Electrical & Electronic Nanoscience & Nanotechnology Engineering Science & Technology - Other Topics Spin-transfer torque MTJ memory low power parametric process variations scaling MAGNETIC TUNNEL-JUNCTIONS DESIGN 10.1109/MIEL.2012.6222872 28th International Conference on Microelectronics (MIEL) 349-355 2019-07-03T04:10:52Z 2019-07-03T04:10:52Z 2012-01-01 2019-07-03T03:50:58Z Conference Paper Augustine, Charles, Mojumder, Niladri, Fong, Xuanyao, Choday, Harsha, Park, Sang Phill, Roy, Kaushik (2012-01-01). STT-MRAMs for Future Universal Memories: Perspective and Prospective. 28th International Conference on Microelectronics (MIEL) : 349-355. ScholarBank@NUS Repository. https://doi.org/10.1109/MIEL.2012.6222872 9781467302388 2159-1660 https://scholarbank.nus.edu.sg/handle/10635/156219 IEEE Elements
institution	National University of Singapore
building	NUS Library
country	Singapore
collection	ScholarBank@NUS
topic	Science & Technology Technology Engineering, Electrical & Electronic Nanoscience & Nanotechnology Engineering Science & Technology - Other Topics Spin-transfer torque MTJ memory low power parametric process variations scaling MAGNETIC TUNNEL-JUNCTIONS DESIGN
spellingShingle	Science & Technology Technology Engineering, Electrical & Electronic Nanoscience & Nanotechnology Engineering Science & Technology - Other Topics Spin-transfer torque MTJ memory low power parametric process variations scaling MAGNETIC TUNNEL-JUNCTIONS DESIGN Augustine, Charles Mojumder, Niladri Fong, Xuanyao Choday, Harsha Park, Sang Phill Roy, Kaushik STT-MRAMs for Future Universal Memories: Perspective and Prospective
description	10.1109/MIEL.2012.6222872
author2	DEPT OF ELECTRICAL & COMPUTER ENGG
author_facet	DEPT OF ELECTRICAL & COMPUTER ENGG Augustine, Charles Mojumder, Niladri Fong, Xuanyao Choday, Harsha Park, Sang Phill Roy, Kaushik
format	Conference or Workshop Item
author	Augustine, Charles Mojumder, Niladri Fong, Xuanyao Choday, Harsha Park, Sang Phill Roy, Kaushik
author_sort	Augustine, Charles
title	STT-MRAMs for Future Universal Memories: Perspective and Prospective
title_short	STT-MRAMs for Future Universal Memories: Perspective and Prospective
title_full	STT-MRAMs for Future Universal Memories: Perspective and Prospective
title_fullStr	STT-MRAMs for Future Universal Memories: Perspective and Prospective
title_full_unstemmed	STT-MRAMs for Future Universal Memories: Perspective and Prospective
title_sort	stt-mrams for future universal memories: perspective and prospective
publisher	IEEE
publishDate	2019
url	https://scholarbank.nus.edu.sg/handle/10635/156219
_version_	1681099577629868032

STT-MRAMs for Future Universal Memories: Perspective and Prospective

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