STT-MRAMs for Future Universal Memories: Perspective and Prospective

• Main Authors: Augustine, Charles, Mojumder, Niladri, Fong, Xuanyao, Choday, Harsha, Park, Sang Phill, Roy, Kaushik
• Other Authors: DEPT OF ELECTRICAL & COMPUTER ENGG
• Format: Conference or Workshop Item
• Published: IEEE 2019
• Subjects: Science & Technology; Technology; Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Engineering; Science & Technology - Other Topics; Spin-transfer torque; MTJ; memory; low power; parametric process variations; scaling; MAGNETIC TUNNEL-JUNCTIONS; DESIGN
• Online Access: https://scholarbank.nus.edu.sg/handle/10635/156219
• Institution: National University of Singapore

10.1109/MIEL.2012.6222872