STT-MRAMs for Future Universal Memories: Perspective and Prospective

STT-MRAMs for Future Universal Memories: Perspective and Prospective

10.1109/MIEL.2012.6222872

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Bibliographic Details
Main Authors: Augustine, Charles, Mojumder, Niladri, Fong, Xuanyao, Choday, Harsha, Park, Sang Phill, Roy, Kaushik
Other Authors: DEPT OF ELECTRICAL & COMPUTER ENGG
Format: Conference or Workshop Item
Published: IEEE 2019
Subjects:
Science & Technology
Technology
Engineering, Electrical & Electronic
Nanoscience & Nanotechnology
Engineering
Science & Technology - Other Topics
Spin-transfer torque
MTJ
memory
low power
parametric process variations
scaling
MAGNETIC TUNNEL-JUNCTIONS
DESIGN
Online Access:https://scholarbank.nus.edu.sg/handle/10635/156219
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Institution: National University of Singapore

Internet

https://scholarbank.nus.edu.sg/handle/10635/156219

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