Surface passivation and high-k dielectrics integration of Ge-based FETs: First-principles calculations and in situ characterizations.

Ph.D

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Bibliographic Details
Main Author:	YANG MING
Other Authors:	PHYSICS
Format:	Theses and Dissertations
Language:	English
Published:	2010
Subjects:	Ge-FETs, surface passivation, high K dielectric
Online Access:	https://scholarbank.nus.edu.sg/handle/10635/16505
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Institution:	National University of Singapore
Language:	English

id	sg-nus-scholar.10635-16505
record_format	dspace
spelling	sg-nus-scholar.10635-165052020-11-18T03:04:13Z Surface passivation and high-k dielectrics integration of Ge-based FETs: First-principles calculations and in situ characterizations. YANG MING PHYSICS FENG YUAN PING WANG SHIJIE Ge-FETs, surface passivation, high K dielectric Ph.D DOCTOR OF PHILOSOPHY 2010-04-08T11:05:41Z 2010-04-08T11:05:41Z 2009-07-01 Thesis YANG MING (2009-07-01). Surface passivation and high-k dielectrics integration of Ge-based FETs: First-principles calculations and in situ characterizations.. ScholarBank@NUS Repository. https://scholarbank.nus.edu.sg/handle/10635/16505 NOT_IN_WOS en
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
language	English
topic	Ge-FETs, surface passivation, high K dielectric
spellingShingle	Ge-FETs, surface passivation, high K dielectric YANG MING Surface passivation and high-k dielectrics integration of Ge-based FETs: First-principles calculations and in situ characterizations.
description	Ph.D
author2	PHYSICS
author_facet	PHYSICS YANG MING
format	Theses and Dissertations
author	YANG MING
author_sort	YANG MING
title	Surface passivation and high-k dielectrics integration of Ge-based FETs: First-principles calculations and in situ characterizations.
title_short	Surface passivation and high-k dielectrics integration of Ge-based FETs: First-principles calculations and in situ characterizations.
title_full	Surface passivation and high-k dielectrics integration of Ge-based FETs: First-principles calculations and in situ characterizations.
title_fullStr	Surface passivation and high-k dielectrics integration of Ge-based FETs: First-principles calculations and in situ characterizations.
title_full_unstemmed	Surface passivation and high-k dielectrics integration of Ge-based FETs: First-principles calculations and in situ characterizations.
title_sort	surface passivation and high-k dielectrics integration of ge-based fets: first-principles calculations and in situ characterizations.
publishDate	2010
url	https://scholarbank.nus.edu.sg/handle/10635/16505
_version_	1684664553516826624

Surface passivation and high-k dielectrics integration of Ge-based FETs: First-principles calculations and in situ characterizations.

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