Surface passivation and high-k dielectrics integration of Ge-based FETs: First-principles calculations and in situ characterizations.

Ph.D

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Bibliographic Details
Main Author: YANG MING
Other Authors: PHYSICS
Format: Theses and Dissertations
Language:English
Published: 2010
Subjects:
Online Access:https://scholarbank.nus.edu.sg/handle/10635/16505
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Institution: National University of Singapore
Language: English
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