Surface passivation and high-k dielectrics integration of Ge-based FETs: First-principles calculations and in situ characterizations.
Ph.D
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| 格式: | Theses and Dissertations |
| 語言: | English |
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2010
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| 在線閱讀: | https://scholarbank.nus.edu.sg/handle/10635/16505 |
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| 機構: | National University of Singapore |
| 語言: | English |