A STUDY OF DEEP LEVELS IN LASER-PREPARED SILICON RECTIFYING JUNCTIONS USING A COMPUTER-CONTROLLED DLTS SYSTEM
Master's
Saved in:
Main Author: | WOON HIN SWEE |
---|---|
Other Authors: | PHYSICS |
Format: | Theses and Dissertations |
Published: |
2020
|
Online Access: | https://scholarbank.nus.edu.sg/handle/10635/165665 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
RANCANG BANGUN SISTEM KARAKTERISASI IMPURITAS TINGKAT DALAM PADA BAHAN SEMIKONDUKTOR DENGAN METODE DEEP LEVEL TRANSIENT SPECTROSCOPY (DLTS)
by: Abdurrouf -
Robust reproducible large-area molecular rectifier junctions
by: Che, H.-J., et al.
Published: (2014) -
A new method for separation of randow noise from capacitance signal in dlts measurement
by: Hoang, Nam Nhat, et al.
Published: (2017) -
Pulsed laser annealing of ultra-shallow junctions in silicon-germanium
by: Tan, L.S., et al.
Published: (2014) -
Bidirectional diode-triggered silicon-controlled rectifiers for low-voltage ESD protection
by: Liu, Wen, et al.
Published: (2013)