Study of Laterally Stacked Nanostructures Using an Organic Semiconducting Channel Fabricated by Trench Isolation Technique

10.1109/tnano.2020.2994640

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Main Authors: Ghosh, Joydeep, Salvan, Georgeta, Reuter, Danny
Other Authors: ELECTRICAL AND COMPUTER ENGINEERING
Format: Article
Published: Institute of Electrical and Electronics Engineers (IEEE) 2020
Online Access:https://scholarbank.nus.edu.sg/handle/10635/173158
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Institution: National University of Singapore
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spelling sg-nus-scholar.10635-1731582024-04-25T03:31:05Z Study of Laterally Stacked Nanostructures Using an Organic Semiconducting Channel Fabricated by Trench Isolation Technique Ghosh, Joydeep Salvan, Georgeta Reuter, Danny ELECTRICAL AND COMPUTER ENGINEERING 10.1109/tnano.2020.2994640 IEEE Transactions on Nanotechnology 1-1 2020-08-19T15:51:12Z 2020-08-19T15:51:12Z 2020 2020-06-03T02:50:47Z Article Ghosh, Joydeep, Salvan, Georgeta, Reuter, Danny (2020). Study of Laterally Stacked Nanostructures Using an Organic Semiconducting Channel Fabricated by Trench Isolation Technique. IEEE Transactions on Nanotechnology : 1-1. ScholarBank@NUS Repository. https://doi.org/10.1109/tnano.2020.2994640 1536125X 19410085 https://scholarbank.nus.edu.sg/handle/10635/173158 Institute of Electrical and Electronics Engineers (IEEE) Elements
institution National University of Singapore
building NUS Library
continent Asia
country Singapore
Singapore
content_provider NUS Library
collection ScholarBank@NUS
description 10.1109/tnano.2020.2994640
author2 ELECTRICAL AND COMPUTER ENGINEERING
author_facet ELECTRICAL AND COMPUTER ENGINEERING
Ghosh, Joydeep
Salvan, Georgeta
Reuter, Danny
format Article
author Ghosh, Joydeep
Salvan, Georgeta
Reuter, Danny
spellingShingle Ghosh, Joydeep
Salvan, Georgeta
Reuter, Danny
Study of Laterally Stacked Nanostructures Using an Organic Semiconducting Channel Fabricated by Trench Isolation Technique
author_sort Ghosh, Joydeep
title Study of Laterally Stacked Nanostructures Using an Organic Semiconducting Channel Fabricated by Trench Isolation Technique
title_short Study of Laterally Stacked Nanostructures Using an Organic Semiconducting Channel Fabricated by Trench Isolation Technique
title_full Study of Laterally Stacked Nanostructures Using an Organic Semiconducting Channel Fabricated by Trench Isolation Technique
title_fullStr Study of Laterally Stacked Nanostructures Using an Organic Semiconducting Channel Fabricated by Trench Isolation Technique
title_full_unstemmed Study of Laterally Stacked Nanostructures Using an Organic Semiconducting Channel Fabricated by Trench Isolation Technique
title_sort study of laterally stacked nanostructures using an organic semiconducting channel fabricated by trench isolation technique
publisher Institute of Electrical and Electronics Engineers (IEEE)
publishDate 2020
url https://scholarbank.nus.edu.sg/handle/10635/173158
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