Electronic properties of atomically thin MoS2 layers grown by physical vapour deposition: Band structure and energy level alignment at layer/substrate interfaces

10.1039/c8ra00635k

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Bibliographic Details
Main Authors:	Bussolotti, F, Chai, J, Yang, M, Kawai, H, Zhang, Z, Wang, S, Wong, S.L, Manzano, C, Huang, Y, Chi, D, Goh, K.E.J
Other Authors:	DEPT OF PHYSICS
Format:	Article
Published:	2020
Subjects:	Crystal symmetry D region Defects Deposition Electronic properties Energy gap Interface states Layered semiconductors Molybdenum compounds Photoelectron spectroscopy Physical vapor deposition Scanning tunneling microscopy Single crystals Substrates Vapor deposition Angle resolved photoemission spectroscopy Density of electronic state Energy level alignment Highly ordered pyrolytic graphites Inter-layer couplings Physical vapour deposition Rotational disorder Structural defect X ray photoelectron spectroscopy
Online Access:	https://scholarbank.nus.edu.sg/handle/10635/178278
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Institution:	National University of Singapore

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spelling	sg-nus-scholar.10635-1782782023-09-06T08:53:25Z Electronic properties of atomically thin MoS2 layers grown by physical vapour deposition: Band structure and energy level alignment at layer/substrate interfaces Bussolotti, F Chai, J Yang, M Kawai, H Zhang, Z Wang, S Wong, S.L Manzano, C Huang, Y Chi, D Goh, K.E.J DEPT OF PHYSICS Crystal symmetry D region Defects Deposition Electronic properties Energy gap Interface states Layered semiconductors Molybdenum compounds Photoelectron spectroscopy Physical vapor deposition Scanning tunneling microscopy Single crystals Substrates Vapor deposition Angle resolved photoemission spectroscopy Density of electronic state Energy level alignment Highly ordered pyrolytic graphites Inter-layer couplings Physical vapour deposition Rotational disorder Structural defect X ray photoelectron spectroscopy 10.1039/c8ra00635k RSC Advances 8 14 7744-7752 2020-10-20T09:01:50Z 2020-10-20T09:01:50Z 2018 Article Bussolotti, F, Chai, J, Yang, M, Kawai, H, Zhang, Z, Wang, S, Wong, S.L, Manzano, C, Huang, Y, Chi, D, Goh, K.E.J (2018). Electronic properties of atomically thin MoS2 layers grown by physical vapour deposition: Band structure and energy level alignment at layer/substrate interfaces. RSC Advances 8 (14) : 7744-7752. ScholarBank@NUS Repository. https://doi.org/10.1039/c8ra00635k 20462069 https://scholarbank.nus.edu.sg/handle/10635/178278 Attribution 4.0 International http://creativecommons.org/licenses/by/4.0/ Unpaywall 20201031
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	Crystal symmetry D region Defects Deposition Electronic properties Energy gap Interface states Layered semiconductors Molybdenum compounds Photoelectron spectroscopy Physical vapor deposition Scanning tunneling microscopy Single crystals Substrates Vapor deposition Angle resolved photoemission spectroscopy Density of electronic state Energy level alignment Highly ordered pyrolytic graphites Inter-layer couplings Physical vapour deposition Rotational disorder Structural defect X ray photoelectron spectroscopy
spellingShingle	Crystal symmetry D region Defects Deposition Electronic properties Energy gap Interface states Layered semiconductors Molybdenum compounds Photoelectron spectroscopy Physical vapor deposition Scanning tunneling microscopy Single crystals Substrates Vapor deposition Angle resolved photoemission spectroscopy Density of electronic state Energy level alignment Highly ordered pyrolytic graphites Inter-layer couplings Physical vapour deposition Rotational disorder Structural defect X ray photoelectron spectroscopy Bussolotti, F Chai, J Yang, M Kawai, H Zhang, Z Wang, S Wong, S.L Manzano, C Huang, Y Chi, D Goh, K.E.J Electronic properties of atomically thin MoS2 layers grown by physical vapour deposition: Band structure and energy level alignment at layer/substrate interfaces
description	10.1039/c8ra00635k
author2	DEPT OF PHYSICS
author_facet	DEPT OF PHYSICS Bussolotti, F Chai, J Yang, M Kawai, H Zhang, Z Wang, S Wong, S.L Manzano, C Huang, Y Chi, D Goh, K.E.J
format	Article
author	Bussolotti, F Chai, J Yang, M Kawai, H Zhang, Z Wang, S Wong, S.L Manzano, C Huang, Y Chi, D Goh, K.E.J
author_sort	Bussolotti, F
title	Electronic properties of atomically thin MoS2 layers grown by physical vapour deposition: Band structure and energy level alignment at layer/substrate interfaces
title_short	Electronic properties of atomically thin MoS2 layers grown by physical vapour deposition: Band structure and energy level alignment at layer/substrate interfaces
title_full	Electronic properties of atomically thin MoS2 layers grown by physical vapour deposition: Band structure and energy level alignment at layer/substrate interfaces
title_fullStr	Electronic properties of atomically thin MoS2 layers grown by physical vapour deposition: Band structure and energy level alignment at layer/substrate interfaces
title_full_unstemmed	Electronic properties of atomically thin MoS2 layers grown by physical vapour deposition: Band structure and energy level alignment at layer/substrate interfaces
title_sort	electronic properties of atomically thin mos2 layers grown by physical vapour deposition: band structure and energy level alignment at layer/substrate interfaces
publishDate	2020
url	https://scholarbank.nus.edu.sg/handle/10635/178278
_version_	1779152223423430656

Electronic properties of atomically thin MoS2 layers grown by physical vapour deposition: Band structure and energy level alignment at layer/substrate interfaces

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