Electronic properties of atomically thin MoS2 layers grown by physical vapour deposition: Band structure and energy level alignment at layer/substrate interfaces

• Main Authors: Bussolotti, F, Chai, J, Yang, M, Kawai, H, Zhang, Z, Wang, S, Wong, S.L, Manzano, C, Huang, Y, Chi, D, Goh, K.E.J
• Other Authors: DEPT OF PHYSICS
• Format: Article
• Published: 2020
• Subjects: Crystal symmetry; D region; Defects; Deposition; Electronic properties; Energy gap; Interface states; Layered semiconductors; Molybdenum compounds; Photoelectron spectroscopy; Physical vapor deposition; Scanning tunneling microscopy; Single crystals; Substrates; Vapor deposition; Angle resolved photoemission spectroscopy; Density of electronic state; Energy level alignment; Highly ordered pyrolytic graphites; Inter-layer couplings; Physical vapour deposition; Rotational disorder; Structural defect; X ray photoelectron spectroscopy
• Online Access: https://scholarbank.nus.edu.sg/handle/10635/178278
• Institution: National University of Singapore

10.1039/c8ra00635k