Electronic properties of atomically thin MoS2 layers grown by physical vapour deposition: Band structure and energy level alignment at layer/substrate interfaces

Electronic properties of atomically thin MoS2 layers grown by physical vapour deposition: Band structure and energy level alignment at layer/substrate interfaces

10.1039/c8ra00635k

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Bibliographic Details
Main Authors:	Bussolotti, F, Chai, J, Yang, M, Kawai, H, Zhang, Z, Wang, S, Wong, S.L, Manzano, C, Huang, Y, Chi, D, Goh, K.E.J
Other Authors:	DEPT OF PHYSICS
Format:	Article
Published:	2020
Subjects:	Crystal symmetry D region Defects Deposition Electronic properties Energy gap Interface states Layered semiconductors Molybdenum compounds Photoelectron spectroscopy Physical vapor deposition Scanning tunneling microscopy Single crystals Substrates Vapor deposition Angle resolved photoemission spectroscopy Density of electronic state Energy level alignment Highly ordered pyrolytic graphites Inter-layer couplings Physical vapour deposition Rotational disorder Structural defect X ray photoelectron spectroscopy
Online Access:	https://scholarbank.nus.edu.sg/handle/10635/178278
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Institution:	National University of Singapore

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