In0.49Ga0.51P/GaAs heterojunction bipolar transistors (HBTs) on 200 mm Si substrates: Effects of base thickness, base and sub-collector doping concentrations

In0.49Ga0.51P/GaAs heterojunction bipolar transistors (HBTs) on 200 mm Si substrates: Effects of base thickness, base and sub-collector doping concentrations

10.1063/1.5058717

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Bibliographic Details
Main Authors:	Wang, Y, Lee, K.H, Loke, W.K, Ben Chiah, S, Zhou, X, Yoon, S.F, Tan, C.S, Fitzgerald, E
Other Authors:	ELECTRICAL AND COMPUTER ENGINEERING
Format:	Article
Published:	2020
Subjects:	Buffer layers Gallium arsenide Heterojunctions III-V semiconductors Metallorganic chemical vapor deposition Power amplifiers Semiconductor doping Silicon wafers Substrates Telephone sets Collector doping DC current gain Doping concentration Germaniums (Ge) Heterojunction bipolar transistor (HBTs) Mobile phone handsets Monolithic integration Silicon substrates Heterojunction bipolar transistors
Online Access:	https://scholarbank.nus.edu.sg/handle/10635/182070
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Institution:	National University of Singapore

Description
Summary:	10.1063/1.5058717