In0.49Ga0.51P/GaAs heterojunction bipolar transistors (HBTs) on 200 mm Si substrates: Effects of base thickness, base and sub-collector doping concentrations

10.1063/1.5058717

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Bibliographic Details
Main Authors:	Wang, Y, Lee, K.H, Loke, W.K, Ben Chiah, S, Zhou, X, Yoon, S.F, Tan, C.S, Fitzgerald, E
Other Authors:	ELECTRICAL AND COMPUTER ENGINEERING
Format:	Article
Published:	2020
Subjects:	Buffer layers Gallium arsenide Heterojunctions III-V semiconductors Metallorganic chemical vapor deposition Power amplifiers Semiconductor doping Silicon wafers Substrates Telephone sets Collector doping DC current gain Doping concentration Germaniums (Ge) Heterojunction bipolar transistor (HBTs) Mobile phone handsets Monolithic integration Silicon substrates Heterojunction bipolar transistors
Online Access:	https://scholarbank.nus.edu.sg/handle/10635/182070
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-182070
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spelling	sg-nus-scholar.10635-1820702024-04-25T03:33:32Z In0.49Ga0.51P/GaAs heterojunction bipolar transistors (HBTs) on 200 mm Si substrates: Effects of base thickness, base and sub-collector doping concentrations Wang, Y Lee, K.H Loke, W.K Ben Chiah, S Zhou, X Yoon, S.F Tan, C.S Fitzgerald, E ELECTRICAL AND COMPUTER ENGINEERING Buffer layers Gallium arsenide Heterojunctions III-V semiconductors Metallorganic chemical vapor deposition Power amplifiers Semiconductor doping Silicon wafers Substrates Telephone sets Collector doping DC current gain Doping concentration Germaniums (Ge) Heterojunction bipolar transistor (HBTs) Mobile phone handsets Monolithic integration Silicon substrates Heterojunction bipolar transistors 10.1063/1.5058717 AIP Advances 8 11 115132 2020-10-30T02:05:27Z 2020-10-30T02:05:27Z 2018 Article Wang, Y, Lee, K.H, Loke, W.K, Ben Chiah, S, Zhou, X, Yoon, S.F, Tan, C.S, Fitzgerald, E (2018). In0.49Ga0.51P/GaAs heterojunction bipolar transistors (HBTs) on 200 mm Si substrates: Effects of base thickness, base and sub-collector doping concentrations. AIP Advances 8 (11) : 115132. ScholarBank@NUS Repository. https://doi.org/10.1063/1.5058717 21583226 https://scholarbank.nus.edu.sg/handle/10635/182070 Attribution 4.0 International http://creativecommons.org/licenses/by/4.0/ Unpaywall 20201031
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	Buffer layers Gallium arsenide Heterojunctions III-V semiconductors Metallorganic chemical vapor deposition Power amplifiers Semiconductor doping Silicon wafers Substrates Telephone sets Collector doping DC current gain Doping concentration Germaniums (Ge) Heterojunction bipolar transistor (HBTs) Mobile phone handsets Monolithic integration Silicon substrates Heterojunction bipolar transistors
spellingShingle	Buffer layers Gallium arsenide Heterojunctions III-V semiconductors Metallorganic chemical vapor deposition Power amplifiers Semiconductor doping Silicon wafers Substrates Telephone sets Collector doping DC current gain Doping concentration Germaniums (Ge) Heterojunction bipolar transistor (HBTs) Mobile phone handsets Monolithic integration Silicon substrates Heterojunction bipolar transistors Wang, Y Lee, K.H Loke, W.K Ben Chiah, S Zhou, X Yoon, S.F Tan, C.S Fitzgerald, E In0.49Ga0.51P/GaAs heterojunction bipolar transistors (HBTs) on 200 mm Si substrates: Effects of base thickness, base and sub-collector doping concentrations
description	10.1063/1.5058717
author2	ELECTRICAL AND COMPUTER ENGINEERING
author_facet	ELECTRICAL AND COMPUTER ENGINEERING Wang, Y Lee, K.H Loke, W.K Ben Chiah, S Zhou, X Yoon, S.F Tan, C.S Fitzgerald, E
format	Article
author	Wang, Y Lee, K.H Loke, W.K Ben Chiah, S Zhou, X Yoon, S.F Tan, C.S Fitzgerald, E
author_sort	Wang, Y
title	In0.49Ga0.51P/GaAs heterojunction bipolar transistors (HBTs) on 200 mm Si substrates: Effects of base thickness, base and sub-collector doping concentrations
title_short	In0.49Ga0.51P/GaAs heterojunction bipolar transistors (HBTs) on 200 mm Si substrates: Effects of base thickness, base and sub-collector doping concentrations
title_full	In0.49Ga0.51P/GaAs heterojunction bipolar transistors (HBTs) on 200 mm Si substrates: Effects of base thickness, base and sub-collector doping concentrations
title_fullStr	In0.49Ga0.51P/GaAs heterojunction bipolar transistors (HBTs) on 200 mm Si substrates: Effects of base thickness, base and sub-collector doping concentrations
title_full_unstemmed	In0.49Ga0.51P/GaAs heterojunction bipolar transistors (HBTs) on 200 mm Si substrates: Effects of base thickness, base and sub-collector doping concentrations
title_sort	in0.49ga0.51p/gaas heterojunction bipolar transistors (hbts) on 200 mm si substrates: effects of base thickness, base and sub-collector doping concentrations
publishDate	2020
url	https://scholarbank.nus.edu.sg/handle/10635/182070
_version_	1800914660296228864

In0.49Ga0.51P/GaAs heterojunction bipolar transistors (HBTs) on 200 mm Si substrates: Effects of base thickness, base and sub-collector doping concentrations

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