In0.49Ga0.51P/GaAs heterojunction bipolar transistors (HBTs) on 200 mm Si substrates: Effects of base thickness, base and sub-collector doping concentrations

• المؤلفون الرئيسيون: Wang, Y, Lee, K.H, Loke, W.K, Ben Chiah, S, Zhou, X, Yoon, S.F, Tan, C.S, Fitzgerald, E
• مؤلفون آخرون: ELECTRICAL AND COMPUTER ENGINEERING
• التنسيق: مقال
• منشور في: 2020
• الموضوعات: Buffer layers; Gallium arsenide; Heterojunctions; III-V semiconductors; Metallorganic chemical vapor deposition; Power amplifiers; Semiconductor doping; Silicon wafers; Substrates; Telephone sets; Collector doping; DC current gain; Doping concentration; Germaniums (Ge); Heterojunction bipolar transistor (HBTs); Mobile phone handsets; Monolithic integration; Silicon substrates; Heterojunction bipolar transistors
• الوصول للمادة أونلاين: https://scholarbank.nus.edu.sg/handle/10635/182070

10.1063/1.5058717