Novel epitaxial silicon interlayer for junction engineering in aggressively-scaled germanium photodetectors

Novel epitaxial silicon interlayer for junction engineering in aggressively-scaled germanium photodetectors

10.1063/1.4821118

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Bibliographic Details
Main Authors: Lim, A.E.-J, Liow, T.-Y, Chen, K.K, Tern, R.P.C, Lo, G.-Q
Other Authors: ARCHITECTURE
Format: Article
Published: 2020
Subjects:
Bandwidth performance
Epitaxial silicon
Epitaxially grown
Junction profiles
Low voltage operation
Phosphorus diffusion
Silicon layer
Ultrathin silicon
Epitaxial growth
Photodetectors
Photons
Silicon
Germanium
Online Access:https://scholarbank.nus.edu.sg/handle/10635/183196
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Institution: National University of Singapore
Description
Summary:10.1063/1.4821118

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