Novel epitaxial silicon interlayer for junction engineering in aggressively-scaled germanium photodetectors

10.1063/1.4821118

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Bibliographic Details
Main Authors: Lim, A.E.-J, Liow, T.-Y, Chen, K.K, Tern, R.P.C, Lo, G.-Q
Other Authors: ARCHITECTURE
Format: Article
Published: 2020
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Online Access:https://scholarbank.nus.edu.sg/handle/10635/183196
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Institution: National University of Singapore
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Summary:10.1063/1.4821118