Work function engineering within a single metal gate stack: Manipulating terbium- and aluminum-induced interface dipoles of opposing polarity

by Lim, A.E.-J., Kwong, D.-L., Yeo, Y.-C.
Published 2014

Manipulating interface dipoles of opposing polarity for work function engineering within a single metal gate stack

by Lim, A.E.-J., Hou, J., Kwong, D.-L., Yeo, Y.-C.
Published 2014

Novel rare-earth dielectric interlayers for wide NMOS work-function tunability in Ni-FUSI gates

by Lim, A.E.-J., Lee, R.T.P., Samudra, G.S., Kwong, D.-L., Yeo, Y.-C.
Published 2014

Modification of molybdenum gate electrode work function via (La-, Al-Induced) dipole effect at High-κ/SiO2 interface

by Lim, A.E.-J., Lee, R.T.P., Samudra, G.S., Kwong, D.-L., Yeo, Y.-C.
Published 2014

Novel epitaxial silicon interlayer for junction engineering in aggressively-scaled germanium photodetectors

by Lim, A.E.-J, Liow, T.-Y, Chen, K.K, Tern, R.P.C, Lo, G.-Q
Published 2020

Full silicidation of silicon gate electrodes using nickel-terbium alloy for MOSFET applications

by Lim, A.E.-J., Lee, R.T.P., Tung, C.H., Tripathy, S., Kwong, D.-L., Yeo, Y.-C.
Published 2014

Effectiveness of aluminum incorporation in nickel silicide and nickel germanide metal gates for work function reduction

by Lim, A.E.-J., Lee, R.T.P., Koh, A.T.Y., Samudra, G.S., Kwong, D.-L., Yeo, Y.-C.
Published 2014

Sulfur-induced PtSi:C/Si:C Schottky barrier height lowering for realizing N-channel FinFETs with reduced external resistance

by Lee, R.T.-P., Lim, A.E.-J., Tan, K.-M., Liow, T.-Y., Chi, D.Z., Yeo, Y.-C.
Published 2014

Interface dipole mechanism and NMOS Ni-FUSI gate work function engineering using rare-earth metal (RE)-based dielectric interlayers

by Lim, A.E.-J., Fang, W.-W., Liu, F., Lee, R.T.P., Samudra, G.S., Kwong, D.-L., Yeo, Y.-C.
Published 2014

Impact of interfacial dipole on effective work function of nickel fully silicided gate electrodes formed on rare-earth-based dielectric interlayers

by Lim, A.E.-J., Fang, W.-W., Liu, F., Lee, R.T.P., Samudra, G., Kwong, D.-L., Yeo, Y.-C.
Published 2014

P-channel tri-gate FinFETs featuring Ni1-yPtySiGe source/drain contacts for enhanced drive current performance

by Lee, R.T.-P., Tan, K.-M., Lim, A.E.-J., Liow, T.-Y., Samudra, G.S., Chi, D.-Z., Yeo, Y.-C.
Published 2014

Performance benefits of diamond-like carbon liner stressor in strained p-channel field-effect transistors with silicon-germanium source and drain

by Tan, K.-M., Yang, M., Fang, W.-W., Lim, A.E.-J., Lee, R.T.-P., Liow, T.-Y., Yeo, Y.-C.
Published 2014

Metal-gate work function modulation using hafnium alloys obtained by the interdiffusion of thin metallic layers

by Lim, A.E.-J., Hwang, W.S., Wang, X.P., Lai, D.M.Y., Samudra, G.S., Kwong, D.-L., Yeo, Y.-C.
Published 2014

Sub-30 nm FinFETs with schottky-barrier source/drain featuring complementary metal silicides and fully-silicided gate for P-FinFETs

by Lee, R.T.P., Tan, K.-M., Liow, T.-Y., Lim, A.E.-J., Lo, G.-Q., Samudra', G.S., Chi, D.-Z., Yeo, Y.-C.
Published 2014

Yttrium- and terbium-based interlayer on SiO2 and HfO2 gate dielectrics for work function modulation of nickel fully silicided gate in nMOSFET

by Lim, A.E.-J., Lee, R.T.P., Wang, X.P., Hwang, W.S., Tung, C.H., Samudra, G.S., Kwong, D.-L., Yeo, Y.-C.
Published 2014

N-channel FinFETs with 25-nm gate length and Schottky-Barrier source and drain featuring Ytterbium silicide

by Lee, R.T.P., Lim, A.E.-J., Tan, K.-M., Liow, T.-Y., Lo, G.-Q., Samudra, G.S., Chi, D.Z., Yeo, Y.-C.
Published 2014

Photoemission study of energy band alignment of Ge2Sb 2Te5 and common CMOS materials

by Fang, L.W.-W., Pan, J.-S., Lim, A.E.-J., Lee, R.T.-P., Li, M., Zhao, R., Shi, L., Chong, T.-C., Yeo, Y.-C.
Published 2014

Nickel-aluminum alloy silicides with high aluminum content for contact resistance reduction and integration in n-channel field-effect transistors

by Koh, A.T.-Y., Lee, R.T.-P., Lim, A.E.-J., Lai, D.M.-Y., Chi, D.-Z., Hoe, K.-M., Balasubramanian, N., Samudra, G.S., Yeo, Y.-C.
Published 2014

Band edge NMOS work function for nickel fully-silicided (FUSI) gate obtained by the insertion of novel Y-, Tb-, and Yb-based interlayers

by Lim, A.E.-J., Lee, R.T.P., Wang, X.P., Hwang, W.S., Tung, C.-H., Lai, D.M.Y., Samudra, G., Kwong, D.-L., Yeo, Y.-C.
Published 2014

Achieving conduction band-edge Schottky barrier height for arsenic-segregated nickel aluminide disilicide and implementation in FinFETs with ultra-narrow fin widths

by Lee, R.T.-P., Liow, T.-Y., Tan, K.-M., Lim, A.E.-J., Koh, A.T.-Y., Zhu, M., Lo, G.-Q., Samudra, G.S., Chi, D.Z., Yeo, Y.-C.
Published 2014