Metal-gate work function modulation using hafnium alloys obtained by the interdiffusion of thin metallic layers

Metal-gate work function modulation using hafnium alloys obtained by the interdiffusion of thin metallic layers

10.1149/1.2437070

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Bibliographic Details
Main Authors: Lim, A.E.-J., Hwang, W.S., Wang, X.P., Lai, D.M.Y., Samudra, G.S., Kwong, D.-L., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/56609
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Institution: National University of Singapore

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http://scholarbank.nus.edu.sg/handle/10635/56609

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