Metal-gate work function modulation using hafnium alloys obtained by the interdiffusion of thin metallic layers

10.1149/1.2437070

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Main Authors: Lim, A.E.-J., Hwang, W.S., Wang, X.P., Lai, D.M.Y., Samudra, G.S., Kwong, D.-L., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/56609
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Institution: National University of Singapore
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spelling sg-nus-scholar.10635-566092023-10-30T22:03:48Z Metal-gate work function modulation using hafnium alloys obtained by the interdiffusion of thin metallic layers Lim, A.E.-J. Hwang, W.S. Wang, X.P. Lai, D.M.Y. Samudra, G.S. Kwong, D.-L. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING 10.1149/1.2437070 Journal of the Electrochemical Society 154 4 H309-H313 JESOA 2014-06-17T02:56:32Z 2014-06-17T02:56:32Z 2007 Article Lim, A.E.-J., Hwang, W.S., Wang, X.P., Lai, D.M.Y., Samudra, G.S., Kwong, D.-L., Yeo, Y.-C. (2007). Metal-gate work function modulation using hafnium alloys obtained by the interdiffusion of thin metallic layers. Journal of the Electrochemical Society 154 (4) : H309-H313. ScholarBank@NUS Repository. https://doi.org/10.1149/1.2437070 00134651 http://scholarbank.nus.edu.sg/handle/10635/56609 000244792200067 Scopus
institution National University of Singapore
building NUS Library
continent Asia
country Singapore
Singapore
content_provider NUS Library
collection ScholarBank@NUS
description 10.1149/1.2437070
author2 ELECTRICAL & COMPUTER ENGINEERING
author_facet ELECTRICAL & COMPUTER ENGINEERING
Lim, A.E.-J.
Hwang, W.S.
Wang, X.P.
Lai, D.M.Y.
Samudra, G.S.
Kwong, D.-L.
Yeo, Y.-C.
format Article
author Lim, A.E.-J.
Hwang, W.S.
Wang, X.P.
Lai, D.M.Y.
Samudra, G.S.
Kwong, D.-L.
Yeo, Y.-C.
spellingShingle Lim, A.E.-J.
Hwang, W.S.
Wang, X.P.
Lai, D.M.Y.
Samudra, G.S.
Kwong, D.-L.
Yeo, Y.-C.
Metal-gate work function modulation using hafnium alloys obtained by the interdiffusion of thin metallic layers
author_sort Lim, A.E.-J.
title Metal-gate work function modulation using hafnium alloys obtained by the interdiffusion of thin metallic layers
title_short Metal-gate work function modulation using hafnium alloys obtained by the interdiffusion of thin metallic layers
title_full Metal-gate work function modulation using hafnium alloys obtained by the interdiffusion of thin metallic layers
title_fullStr Metal-gate work function modulation using hafnium alloys obtained by the interdiffusion of thin metallic layers
title_full_unstemmed Metal-gate work function modulation using hafnium alloys obtained by the interdiffusion of thin metallic layers
title_sort metal-gate work function modulation using hafnium alloys obtained by the interdiffusion of thin metallic layers
publishDate 2014
url http://scholarbank.nus.edu.sg/handle/10635/56609
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