Metal-gate work function modulation using hafnium alloys obtained by the interdiffusion of thin metallic layers

Metal-gate work function modulation using hafnium alloys obtained by the interdiffusion of thin metallic layers

10.1149/1.2437070

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Bibliographic Details
Main Authors:	Lim, A.E.-J., Hwang, W.S., Wang, X.P., Lai, D.M.Y., Samudra, G.S., Kwong, D.-L., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/56609
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Institution:	National University of Singapore

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