Novel epitaxial silicon interlayer for junction engineering in aggressively-scaled germanium photodetectors

• Main Authors: Lim, A.E.-J, Liow, T.-Y, Chen, K.K, Tern, R.P.C, Lo, G.-Q
• Other Authors: ARCHITECTURE
• Format: Article
• Published: 2020
• Subjects: Bandwidth performance; Epitaxial silicon; Epitaxially grown; Junction profiles; Low voltage operation; Phosphorus diffusion; Silicon layer; Ultrathin silicon; Epitaxial growth; Photodetectors; Photons; Silicon; Germanium
• Online Access: https://scholarbank.nus.edu.sg/handle/10635/183196
• Institution: National University of Singapore

10.1063/1.4821118