Novel epitaxial silicon interlayer for junction engineering in aggressively-scaled germanium photodetectors

10.1063/1.4821118

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Bibliographic Details
Main Authors:	Lim, A.E.-J, Liow, T.-Y, Chen, K.K, Tern, R.P.C, Lo, G.-Q
Other Authors:	ARCHITECTURE
Format:	Article
Published:	2020
Subjects:	Bandwidth performance Epitaxial silicon Epitaxially grown Junction profiles Low voltage operation Phosphorus diffusion Silicon layer Ultrathin silicon Epitaxial growth Photodetectors Photons Silicon Germanium
Online Access:	https://scholarbank.nus.edu.sg/handle/10635/183196
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-183196
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spelling	sg-nus-scholar.10635-1831962024-04-02T03:52:09Z Novel epitaxial silicon interlayer for junction engineering in aggressively-scaled germanium photodetectors Lim, A.E.-J Liow, T.-Y Chen, K.K Tern, R.P.C Lo, G.-Q ARCHITECTURE Bandwidth performance Epitaxial silicon Epitaxially grown Junction profiles Low voltage operation Phosphorus diffusion Silicon layer Ultrathin silicon Epitaxial growth Photodetectors Photons Silicon Germanium 10.1063/1.4821118 AIP Advances 3 9 92106 2020-11-10T00:30:04Z 2020-11-10T00:30:04Z 2013 Article Lim, A.E.-J, Liow, T.-Y, Chen, K.K, Tern, R.P.C, Lo, G.-Q (2013). Novel epitaxial silicon interlayer for junction engineering in aggressively-scaled germanium photodetectors. AIP Advances 3 (9) : 92106. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4821118 21583226 https://scholarbank.nus.edu.sg/handle/10635/183196 Attribution 4.0 International http://creativecommons.org/licenses/by/4.0/ Unpaywall 20201031
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	Bandwidth performance Epitaxial silicon Epitaxially grown Junction profiles Low voltage operation Phosphorus diffusion Silicon layer Ultrathin silicon Epitaxial growth Photodetectors Photons Silicon Germanium
spellingShingle	Bandwidth performance Epitaxial silicon Epitaxially grown Junction profiles Low voltage operation Phosphorus diffusion Silicon layer Ultrathin silicon Epitaxial growth Photodetectors Photons Silicon Germanium Lim, A.E.-J Liow, T.-Y Chen, K.K Tern, R.P.C Lo, G.-Q Novel epitaxial silicon interlayer for junction engineering in aggressively-scaled germanium photodetectors
description	10.1063/1.4821118
author2	ARCHITECTURE
author_facet	ARCHITECTURE Lim, A.E.-J Liow, T.-Y Chen, K.K Tern, R.P.C Lo, G.-Q
format	Article
author	Lim, A.E.-J Liow, T.-Y Chen, K.K Tern, R.P.C Lo, G.-Q
author_sort	Lim, A.E.-J
title	Novel epitaxial silicon interlayer for junction engineering in aggressively-scaled germanium photodetectors
title_short	Novel epitaxial silicon interlayer for junction engineering in aggressively-scaled germanium photodetectors
title_full	Novel epitaxial silicon interlayer for junction engineering in aggressively-scaled germanium photodetectors
title_fullStr	Novel epitaxial silicon interlayer for junction engineering in aggressively-scaled germanium photodetectors
title_full_unstemmed	Novel epitaxial silicon interlayer for junction engineering in aggressively-scaled germanium photodetectors
title_sort	novel epitaxial silicon interlayer for junction engineering in aggressively-scaled germanium photodetectors
publishDate	2020
url	https://scholarbank.nus.edu.sg/handle/10635/183196
_version_	1795301378587885568

Novel epitaxial silicon interlayer for junction engineering in aggressively-scaled germanium photodetectors

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