High-Frequency Characteristics of InGaP/GaAs Double Heterojunction Bipolar Transistor Epitaxially Grown on 200 mm Ge/Si Wafers
10.1109/JEDS.2020.2967406
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Institute of Electrical and Electronics Engineers Inc.
2021
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sg-nus-scholar.10635-1978782024-04-25T03:31:19Z High-Frequency Characteristics of InGaP/GaAs Double Heterojunction Bipolar Transistor Epitaxially Grown on 200 mm Ge/Si Wafers Khai, L.W. Geok Ing, N. Fitzgerald, E.A. Soon Fatt, Y. Yue, W. Kwang Hong, L. Zhihong, L. Hanlin, X. Siau Ben, C. Eng Kian, K.L. Xing, Z. Tan, C.S. ELECTRICAL AND COMPUTER ENGINEERING bipolar transistors III-V/Si integration semiconductor growth 10.1109/JEDS.2020.2967406 IEEE Journal of the Electron Devices Society 8 122-125 2021-08-19T02:17:26Z 2021-08-19T02:17:26Z 2020 Article Khai, L.W., Geok Ing, N., Fitzgerald, E.A., Soon Fatt, Y., Yue, W., Kwang Hong, L., Zhihong, L., Hanlin, X., Siau Ben, C., Eng Kian, K.L., Xing, Z., Tan, C.S. (2020). High-Frequency Characteristics of InGaP/GaAs Double Heterojunction Bipolar Transistor Epitaxially Grown on 200 mm Ge/Si Wafers. IEEE Journal of the Electron Devices Society 8 : 122-125. ScholarBank@NUS Repository. https://doi.org/10.1109/JEDS.2020.2967406 21686734 https://scholarbank.nus.edu.sg/handle/10635/197878 Institute of Electrical and Electronics Engineers Inc. Scopus OA2020 |
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Asia |
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Singapore Singapore |
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bipolar transistors III-V/Si integration semiconductor growth |
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bipolar transistors III-V/Si integration semiconductor growth Khai, L.W. Geok Ing, N. Fitzgerald, E.A. Soon Fatt, Y. Yue, W. Kwang Hong, L. Zhihong, L. Hanlin, X. Siau Ben, C. Eng Kian, K.L. Xing, Z. Tan, C.S. High-Frequency Characteristics of InGaP/GaAs Double Heterojunction Bipolar Transistor Epitaxially Grown on 200 mm Ge/Si Wafers |
| description |
10.1109/JEDS.2020.2967406 |
| author2 |
ELECTRICAL AND COMPUTER ENGINEERING |
| author_facet |
ELECTRICAL AND COMPUTER ENGINEERING Khai, L.W. Geok Ing, N. Fitzgerald, E.A. Soon Fatt, Y. Yue, W. Kwang Hong, L. Zhihong, L. Hanlin, X. Siau Ben, C. Eng Kian, K.L. Xing, Z. Tan, C.S. |
| format |
Article |
| author |
Khai, L.W. Geok Ing, N. Fitzgerald, E.A. Soon Fatt, Y. Yue, W. Kwang Hong, L. Zhihong, L. Hanlin, X. Siau Ben, C. Eng Kian, K.L. Xing, Z. Tan, C.S. |
| author_sort |
Khai, L.W. |
| title |
High-Frequency Characteristics of InGaP/GaAs Double Heterojunction Bipolar Transistor Epitaxially Grown on 200 mm Ge/Si Wafers |
| title_short |
High-Frequency Characteristics of InGaP/GaAs Double Heterojunction Bipolar Transistor Epitaxially Grown on 200 mm Ge/Si Wafers |
| title_full |
High-Frequency Characteristics of InGaP/GaAs Double Heterojunction Bipolar Transistor Epitaxially Grown on 200 mm Ge/Si Wafers |
| title_fullStr |
High-Frequency Characteristics of InGaP/GaAs Double Heterojunction Bipolar Transistor Epitaxially Grown on 200 mm Ge/Si Wafers |
| title_full_unstemmed |
High-Frequency Characteristics of InGaP/GaAs Double Heterojunction Bipolar Transistor Epitaxially Grown on 200 mm Ge/Si Wafers |
| title_sort |
high-frequency characteristics of ingap/gaas double heterojunction bipolar transistor epitaxially grown on 200 mm ge/si wafers |
| publisher |
Institute of Electrical and Electronics Engineers Inc. |
| publishDate |
2021 |
| url |
https://scholarbank.nus.edu.sg/handle/10635/197878 |
| _version_ |
1800914928365731840 |