High-Frequency Characteristics of InGaP/GaAs Double Heterojunction Bipolar Transistor Epitaxially Grown on 200 mm Ge/Si Wafers

• Main Authors: Khai, L.W., Geok Ing, N., Fitzgerald, E.A., Soon Fatt, Y., Yue, W., Kwang Hong, L., Zhihong, L., Hanlin, X., Siau Ben, C., Eng Kian, K.L., Xing, Z., Tan, C.S.
• Other Authors: ELECTRICAL AND COMPUTER ENGINEERING
• Format: Article
• Published: Institute of Electrical and Electronics Engineers Inc. 2021
• Subjects: bipolar transistors; III-V/Si integration; semiconductor growth
• Online Access: https://scholarbank.nus.edu.sg/handle/10635/197878
• Institution: National University of Singapore

10.1109/JEDS.2020.2967406