High-Frequency Characteristics of InGaP/GaAs Double Heterojunction Bipolar Transistor Epitaxially Grown on 200 mm Ge/Si Wafers

High-Frequency Characteristics of InGaP/GaAs Double Heterojunction Bipolar Transistor Epitaxially Grown on 200 mm Ge/Si Wafers

10.1109/JEDS.2020.2967406

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Bibliographic Details
Main Authors: Khai, L.W., Geok Ing, N., Fitzgerald, E.A., Soon Fatt, Y., Yue, W., Kwang Hong, L., Zhihong, L., Hanlin, X., Siau Ben, C., Eng Kian, K.L., Xing, Z., Tan, C.S.
Other Authors: ELECTRICAL AND COMPUTER ENGINEERING
Format: Article
Published: Institute of Electrical and Electronics Engineers Inc. 2021
Subjects:
bipolar transistors
III-V/Si integration
semiconductor growth
Online Access:https://scholarbank.nus.edu.sg/handle/10635/197878
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Institution: National University of Singapore

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https://scholarbank.nus.edu.sg/handle/10635/197878

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