GE-BASED HIGH MOBILITY CHANNEL TRANSISTORS FOR LOW POWER LOGIC AND BACK-END-OF-LINE COMPATIBLE 3D INTEGRATED CIRCUITS

Ph.D

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Bibliographic Details
Main Author:	KANG YUYE
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Theses and Dissertations
Language:	English
Published:	2022
Subjects:	Ge, high mobility, field-effect transistor, low power, back-end-of-line compatible, 3D integration
Online Access:	https://scholarbank.nus.edu.sg/handle/10635/216504
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Institution:	National University of Singapore
Language:	English

id	sg-nus-scholar.10635-216504
record_format	dspace
spelling	sg-nus-scholar.10635-2165042024-10-26T03:01:40Z GE-BASED HIGH MOBILITY CHANNEL TRANSISTORS FOR LOW POWER LOGIC AND BACK-END-OF-LINE COMPATIBLE 3D INTEGRATED CIRCUITS KANG YUYE ELECTRICAL & COMPUTER ENGINEERING Gong Xiao Yeo Yee Chia Ge, high mobility, field-effect transistor, low power, back-end-of-line compatible, 3D integration Ph.D DOCTOR OF PHILOSOPHY (FOE) 2022-02-28T18:00:31Z 2022-02-28T18:00:31Z 2021-09-29 Thesis KANG YUYE (2021-09-29). GE-BASED HIGH MOBILITY CHANNEL TRANSISTORS FOR LOW POWER LOGIC AND BACK-END-OF-LINE COMPATIBLE 3D INTEGRATED CIRCUITS. ScholarBank@NUS Repository. https://scholarbank.nus.edu.sg/handle/10635/216504 en
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
language	English
topic	Ge, high mobility, field-effect transistor, low power, back-end-of-line compatible, 3D integration
spellingShingle	Ge, high mobility, field-effect transistor, low power, back-end-of-line compatible, 3D integration KANG YUYE GE-BASED HIGH MOBILITY CHANNEL TRANSISTORS FOR LOW POWER LOGIC AND BACK-END-OF-LINE COMPATIBLE 3D INTEGRATED CIRCUITS
description	Ph.D
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING KANG YUYE
format	Theses and Dissertations
author	KANG YUYE
author_sort	KANG YUYE
title	GE-BASED HIGH MOBILITY CHANNEL TRANSISTORS FOR LOW POWER LOGIC AND BACK-END-OF-LINE COMPATIBLE 3D INTEGRATED CIRCUITS
title_short	GE-BASED HIGH MOBILITY CHANNEL TRANSISTORS FOR LOW POWER LOGIC AND BACK-END-OF-LINE COMPATIBLE 3D INTEGRATED CIRCUITS
title_full	GE-BASED HIGH MOBILITY CHANNEL TRANSISTORS FOR LOW POWER LOGIC AND BACK-END-OF-LINE COMPATIBLE 3D INTEGRATED CIRCUITS
title_fullStr	GE-BASED HIGH MOBILITY CHANNEL TRANSISTORS FOR LOW POWER LOGIC AND BACK-END-OF-LINE COMPATIBLE 3D INTEGRATED CIRCUITS
title_full_unstemmed	GE-BASED HIGH MOBILITY CHANNEL TRANSISTORS FOR LOW POWER LOGIC AND BACK-END-OF-LINE COMPATIBLE 3D INTEGRATED CIRCUITS
title_sort	ge-based high mobility channel transistors for low power logic and back-end-of-line compatible 3d integrated circuits
publishDate	2022
url	https://scholarbank.nus.edu.sg/handle/10635/216504
_version_	1821196802967207936

GE-BASED HIGH MOBILITY CHANNEL TRANSISTORS FOR LOW POWER LOGIC AND BACK-END-OF-LINE COMPATIBLE 3D INTEGRATED CIRCUITS

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