GE-BASED HIGH MOBILITY CHANNEL TRANSISTORS FOR LOW POWER LOGIC AND BACK-END-OF-LINE COMPATIBLE 3D INTEGRATED CIRCUITS

• Main Author: KANG YUYE
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Theses and Dissertations
• Language: English
• Published: 2022
• Subjects: Ge, high mobility, field-effect transistor, low power, back-end-of-line compatible, 3D integration
• Online Access: https://scholarbank.nus.edu.sg/handle/10635/216504
• Institution: National University of Singapore

Ph.D